Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 2181-2183
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present here a low-temperature (Ts〈630 °C) process for the selective epitaxial growth of Si that employs atomic hydrogen. Modulation of both the substrate temperature and the flux of atomic hydrogen gives alternating growth and suppression/etching cycles, resulting in a significant increase in selectivity. Epitaxial thin-film quality is essentially unaffected, as verified by in situ analysis via low-energy electron diffraction, and ex situ analysis via scanning electron and atomic-force microscopy. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1408271
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