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  • 2000-2004  (4)
  • 1990-1994
  • 2002  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Film thickness dependence of the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 270-272 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of film thickness on the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system has been studied. Three sets of Ni/Pt/Si(100) bilayered samples with the same Ni:Pt ratios but with different film thicknesses were annealed by rapid thermal annealing at 750–900 °C. Both the x-ray diffraction analysis and the sheet resistance measurement show that the thermal stability of Ni(Pt)Si films improves with a decrease in film thickness. This property of Ni(Pt)Si films reveals the good potential for its applications in ultrashallow junctions. The experimental results are explained in terms of classical nucleation theory. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1434311
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Mark shapes in hybrid recording (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1835-1837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the theoretical and experimental investigation of mark shapes in thermally assisted or hybrid recording. The effect of alignment was studied by recording marks on perpendicular TbFeCo media using a commercial recording head and 840 nm laser. We found that mark shapes are primarily controlled through laser/head alignment, and that maximally straight transitions are obtained by placing the laser spot on the leading pole tip near the gap. Simulations of the recording process confirm the experimental findings and are used in conjunction with static write contours to show how transitions form. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454230
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  • 3
    Electronic Resource
    Electronic Resource
    Molecular and genetic aspects of plant responses to osmotic stress (2002)
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 25 (2002), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Drought, high salinity and freezing impose osmotic stress on plants. Plants respond to the stress in part by modulating gene expression, which eventually leads to the restoration of cellular homeostasis, detoxification of toxins and recovery of growth. The signal transduction pathways mediating these adaptations can be dissected by combining forward and reverse genetic approaches with molecular, biochemical and physiological studies. Arabidopsis is a useful genetic model system for this purpose and its relatives including the halophyte Thellungiella halophila, can serve as valuable complementary genetic model systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3040.2002.00782.x
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  • 4
    Electronic Resource
    Electronic Resource
    Spin tunneling properties in mesoscopic magnets: effects of a magnetic field (2002)
    Springer
    The European physical journal 26 (2002), S. 479-491 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 75.45.+j Macroscopic quantum phenomena in magnetic systems – 75.50.Mm Magnetic liquids
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: The tunneling of a giant spin at excited levels is studied theoretically in mesoscopic magnets with a magnetic field at an arbitrary angle in the easy plane. Different structures of the tunneling barriers can be generated by the magnetocrystalline anisotropy, the magnitude and the orientation of the field. By calculating the nonvacuum instanton solution explicitly, we obtain the tunnel splittings and the tunneling rates for different angle ranges of the external magnetic field ( θ H = π/2 and π/2 〈 θ H 〈 π). The temperature dependences of the decay rates are clearly shown for each case. It is found that the tunneling rate and the crossover temperature depend on the orientation of the external magnetic field. This feature can be tested with the use of existing experimental techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1140/epjb/e20020117
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