ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
P6 and P7 centers, which are responsible for semi-insulating properties of SiC,were shown to be neutral Si-C divacancies (VSi-VC)o having a triplet ground state. The EPRexperiments that were performed at very low temperatures and in complete darkness excludethe possibility of a thermal or optically excited triplet state and, as a result, the existing modelof excited triplet state P6 and P7 centers was discarded. The optical alignment process whichinduces the spin polarization of the ground triplet 3A state of the P6, P7 centers in SiC wasinterpreted to be caused by strong spin selectivity of the intersystem crossing (ISC) nonradiativetransitions from an excited 3E state to a metastable singlet 1A state. Theluminescence and optical absorption are caused by transitions between spin sublevels of 3Aand 3E states. The analogy in properties of a divacancy in SiC and the N-V defect in diamondallows considering the divacancy in SiC as a potential defect for the single defectspectroscopy
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.535.pdf
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