ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
C-plane substrates with off-orientation to 〈1120 〉 may stabilize the grown polytype, butthe stacking fault density (SFD) increases from zero in the on-axis sample to 4500 cm-1 (7.7° off).The SF form preferentially at the seed-crystal-interface by a kinetically induced rearrangement ofsurface ad-atoms on m-facets. Most SF start in bundles with an average distance of 100 .m, whichare subdivided in smaller bundles with 8 .m distance. They start preferentially from the uppercorner of the vertical non-polar plane of bunched steps, which may be composed of small pyramidswith m-facet surfaces. The dislocation density could decrease with increasing SFD by a pinningmechanism
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.21.pdf
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