ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The SI-5 electron-paramagnetic-resonance (EPR) centre is a dominant defect in somehigh-purity semi-insulating (HPSI) SiC substrates and has recently been shown to originate fromthe negatively charged carbon vacancy-carbon antisite pair (VC−Si C ). In this work, photoexcitationEPR (photo-EPR) was used for determination of the energy position of deep acceptor levels ofVCCSi in 4H-SiC. Our photo-EPR measurements in slightly n-type material show an increase of theEPR signal of VC−Si C for photon energies from ~0.8 eV to ~1.3 eV. Combining the data from EPR,deep level transient spectroscopy and supercell calculations we suggest that the (1–|2–) levels of thedifferent configurations of the defect are located in the range ~0.8-1.1 eV below the conductionband
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.449.pdf
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