ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We applied a picosecond transient grating technique for studies of nonequilibrium carrierdynamics in differently grown or doped SiC polytypes. Optical carrier injection in 4H-SiC at twodifferent wavelengths (266 and 355 nm) allowed us to vary the depth of the photoexcited region anddetermine photoelectric parameters of high density (from ~1016 to ~1019 cm-3) carrier plasma in thetemperature range 10 – 300 K. A strong decrease of carrier lifetime with increasing nonequlibriumcarrier density was found in 4H-SiC samples at 300 K and fitted by bimolecular recombination withcoefficient B = 3 × 10-11 cm3 s-1. In 3C-SiC epilayers, the opposite tendency was observed over a widetemperature range and attributed to recharging of defect states
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.509.pdf
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