Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4027-4028 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ultrahigh vacuum compatible cooled ionizer suitable for use with a quadruple mass spectrometer has been constructed. It allows one to monitor rapidly changing signals of condensable gases as are commonly encountered in modulated molecular beam studies of surface reaction kinetics with minimal distortions due to adsorption/desorption phenomena within the ionizer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Nitric oxide synthase (NOS) in the snail Helix pomatia was characterized by biochemical and molecular biological techniques and localized by histochemical methods. Central ganglia contained particulate paraformaldehyde-sensitive and cytosolic paraformaldehyde-insensitive NADPH-diaphorase. The cytosolic NADPH-diaphorase activity coeluted with NOS activity. The activity of NOS was dependent on Ca2+ and NADPH and was inhibited by NG-nitro-l-arginine (l-NNA). Proteins purified by 2′,5′-ADP affinity chromatography were separated by sodium dodecyl sulfate-polyacrylamide gel electrophoresis and migrated at 150, 60, 40, and 30 kDa. An antibody to mammalian NOS exclusively labeled the 60-kDa protein. Characterization of the cDNA of the corresponding 60-kDa NOS-immunoreactive protein revealed no sequence homology with any known NOS isoform. The recombinant protein exhibited Ca2+- and NADPH-dependent NOS activity, which was partially inhibited by EGTA and l-NNA. Histochemistry showed NADPH-diaphorase activity in discrete regions of the central and peripheral nervous system. About 60% of the NADPH-diaphorase-positive neurons colocalize with immunoreactive material detected by antibodies to mammalian NOS. Comparison of organs showed the highest NADPH-diaphorase activity in the nervous system, whereas moderate activity was present in muscle tissue, digestive tract, and gonads. Our study suggests the presence of NOS and a putative NOS-associated/regulating protein in mollusk nervous tissue.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2081-2086 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The superconducting properties of spin-glass superconducting multilayers made of Nb (superconducting) and CuMn (spin glass) have been studied. The superconducting critical temperature Tc of the multilayers was strongly dependent on the thickness of the spin-glass layers. The Radovic et al. theory [Phys. Rev. B 44, 759 (1991)], which foresees a phase difference 0≤φ≤π between neighboring superconducting layers, has given a qualitative description of these experimental data. The parallel and perpendicular critical magnetic-field measurements have shown many interesting effects related to the reduced dimensionality of the samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6414-6420 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray emission from pinch plasma devices with pinch currents ranging from 200 to 400 kA operated with pure high-Z gases are investigated with temporal spatial and spectral resolution. If operated using elements Z〈18 (e.g., nitrogen or neon) K-shell emission is observed from column-like volumes several 100 μm in diameter and several mm in length (bulk or column mode). For Z(approximately-greater-than)18 (e.g., krypton or xenon) emission with hν(approximately-greater-than)1 keV is only observed from micropinches. For argon (Z=18) both modes of operation can be observed. The occurrence of a specific mode depends on the initial gas pressure. In this paper the transition regime between column and micropinches is investigated with particular regard to argon. A criterion is proposed to decide whether column mode or micropinch mode is expected. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6455-6460 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local doping with focused laser beam writing was used to fabricate lateral npn- and pnp-structures on modulation-doped Si/SiGe heterostructures. The electrical and optical properties of the achieved lateral potential modulation were analyzed for local B-doping on n-type Si/SiGe and P- and Sb-doping on p-type SiGe/Si. Focused laser beam written doped lines show a strongly nonohmic IV characteristic indicating the formation of a local insulating barrier in the two-dimensional carrier system. Such lateral structures can be used as photosensitive devices with responsivities up to 106 A/W combined with a spatial resolution on the μm scale. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2876-2878 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral npn structures, fabricated by focused laser beam-induced doping, combine large potential modulations with a small width of the p-doped regions. This results in strong lateral electric fields, which can be tuned by applying a bias voltage. Photon absorption for energies below the band gap is allowed due to the Franz–Keldysh effect. We estimate the value of the electric fields by analyzing wavelength-dependent photocurrent measurements. The fields are comparable to attainable fields in existing vertical modulator structures. The spatially resolved photocurrent measurements reveal the location of the highest lateral electric field, which is at the edges of the p-doped region. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 751-753 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel kind of phototransistor with high gain and sub-μm spatial resolution is fabricated by focused laser beam-induced Zn doping of an n-modulation doped GaAs/Al0.4Ga0.6As quantum well structure. To produce this lateral npn-structure, p-doped lines are directly written over a mesa without degrading the quality of the sample. The local Zn doping causes an effective potential barrier for electrons. Photogenerated holes reduce this barrier and amplify the thermionic electron current. Spatially resolved photocurrent measurements show typical responsivities above 103 A/W and linewidths as small as 605 nm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3025-3027 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Focused laser beam writing is applied for thermally activated diffusion of dopants into strained Si/Ge modulation-doped heterostructures. Lateral p- and n-type potential barriers of sub-μm width are achieved by local diffusion of boron and antimony into n- and p-type heterostructures, respectively. The potential modulation is determined from the temperature dependence of the thermionic current over the barrier. These npn and pnp structures can be used to fabricate in-plane-gate transistors which show transistor action up to room temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 76-78 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral barriers in a two-dimensional electron gas were fabricated by laser-induced doping of GaAs/AlGaAs quantum well structures. The barrier heights of these insulating lines were analyzed as a function of voltage by temperature-dependent current measurements. The barrier height saturates for large bias voltages. This is connected with surprisingly high breakdown voltages of the sub-μm lateral barriers. We propose a model for in-plane-gated structures which can explain these effects by taking into account surface leakage currents and surface charges. The lateral band diagram and the barrier height as a function of voltage were calculated self-consistently using this model. The model and the calculations are in good agreement with experimentally determined barrier heights, depletion lengths, and time-dependent leakage currents. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...