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Digitale Medien

AFM Characterization of Ta-based Diffusion Barriers for Use in Future Semiconductor Metallization (1997)

Fischer, D. ; Meissner, O. ; Bendjus, B. ; [weitere]

Chichester [u.a.] : Wiley-Blackwell

Surface and Interface Analysis 25 (1997), S. 522-528

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Details

ISSN: 0142-2421

Schlagwort(e): Ta ; diffusion barriers ; nanocrystalline films ; amorphous films ; AFM ; Chemistry ; Polymer and Materials Science

Quelle: Wiley InterScience Backfile Collection 1832-2000

Thema: Physik

Notizen: In this paper the investigation of r.f.-sputter-deposited Ta, Ta-N and Ta-N-O thin films is presented. Using atomic force microscopy in combination with sheet resistance measurements, Auger electron spectroscopy and x-ray diffraction, the thin film properties and microstructure are examined. Two crystalline modifications of Ta (tetragonal β-Ta and bcc α-Ta) are reported. By incorporation of nitrogen and/or oxygen into the Ta films, nanocrystalline and quasi-amorphous structures can be achieved. Finally, the usefulness of the films as diffusion barriers in Cu-based metallization systems is described.© 1997 John Wiley & Sons, Ltd.

Zusätzliches Material: 7 Ill.

Materialart: Digitale Medien

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