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  • 1
    Electronic Resource
    Electronic Resource
    Influence of implant condition on the transient-enhanced diffusion of ion-implanted boron in silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2611-2614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Under high-dosage boron implant, the implant condition was found to be important for reducing the transient-enhanced diffusion of boron in Si and forming shallow p+n junction with good rectifying characteristics as well as high dopant concentration in the diffused region. The BF2+-implantation resulted in not only an excellent dopant activation but also a reduced anomalous diffusion due to the formation of amorphous layer and the scarce defects underneath the amorphous/crystalline (a/c) interface. The B+-implanted crystalline samples manifested a poor activation efficiency, and a largely anomalous diffusion at the high temperature with prolonged-time annealing ascribed to much damage induced by the high-dose implant. The B+-implanted pre-Si+-amorphized samples also displayed severely transient-enhanced diffusion in spite of the good dopant activation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351082
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  • 2
    Electronic Resource
    Electronic Resource
    Suppression of anomalous diffusion of ion-implanted boron in silicon by laser processing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3628-3630 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous diffusion of ion-implanted boron in silicon has been suppressed by using the laser annealing (LA) technique. For the rapid thermal annealing process, the high-dosage boron implant significantly enhanced the anomalous diffusion of boron in Si largely due to increased density of interstitial clusters. The mechanism that electrically active dopants contribute to diffusion is confirmed. The dopant activation is primarily determined from the heating process rather than the holding time interval. Hence, the optimum annealing regime, attaining high-performance shallow p+-n junctions, is to increase the dopant activation efficiency during the temperature-ramping process as well as to shorten the holding interval. Having an ultrahigh heating rate, the LA technique serves as an excellent annealing scheme to significantly suppress the anomalous diffusion and considerably promote the dopant activation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350923
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal annealing on the formation of shallow p+n junction by implanting BF2+ ions into thin metal films on Si substrate. I. Thin titanium films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1265-1270 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality Ti-silicided shallow p+n junctions have been fabricated by implanting BF+2 ions into thin Ti films on Si substrate and subsequent silicidation/drive-in by rapid thermal annealing (RTA) or conventional furnace annealing (CFA) under proper implant and anneal conditions. For both the RTA and CFA techniques, annealing temperatures higher than 800 °C degrade the junction formation because of more severe dopant confinement within the silicides and more serious diffusion of knock-on Ti into junction regions. The high-dose implant greatly enhanced the dopant activation and thus improved the junctions. The high heating rate for RTA caused an immediate formation of Ti–B compounds at high temperatures, while CFA considerably promoted the drive-in efficiency because of its low heating rates and long annealing times. Hence, CFA yielded better low-bias rectifying characteristics than RTA due to larger dopant activation. However, CFA caused much worse high reverse-bias characteristics. A rapid increase of reverse currents with bias voltage was observed for the CFA-treated samples, indicating a severe Ti penetration due to long annealing times.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351269
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal annealing on the formation of shallow p+n junction by implanting BF2+ ions into thin metal films on Si substrate. II. Thin cobalt films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1271-1276 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of rapid thermal annealing (RTA) on the formation of shallow p+n junctions by the implantation of BF+2 ions into thin Co films and subsequent silicidation/drive-in have been studied. The junction formation by various implant conditions has been characterized to correlate with the dopant drive-in efficiency, defects in junctions, and junction depth under different anneal conditions. Optimum junctions were achieved by the 700 °C anneal in all the present implant conditions. Annealing at 800 °C degraded the junction formation due to the considerable formation of Co–B compounds caused by the high heating rate and high-temperature processings. Higher implant energy greatly lessened the dopant confinement due to deeper as-implanted dopant profile. Conventional furnace annealing (CFA) considerably enhanced the drive-in efficiency, while RTA is superior to CFA in annihilating damage, activating dopant, and forming shallow junctions. The benefits of RTA are particularly obvious for the implants of low-energy, low-dosage and high-energy, high-dosage. Consequently, low-temperature RTA processings can achieve silicided shallow p+n junctions with good rectifying characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351270
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical characteristics of barium titanate films prepared by laser ablation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2143-2145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The BaTiO3 ferroelectric films of quality suitable for applying as dielectrics in 64 and 256 Mb dynamic random access memory have been successfully synthesized using the laser ablation technique. The dielectric constant and dielectric strength of the films are ε=200 and 1 MV/cm, respectively. The switching characteristics are Qc=0.66 μc/cm2, ts=0.1 ps, and J1=1.57 μA/cm2 at 2.5 V, for charge storage density, writing time, and leakage current density, respectively. The quality of the BaTiO3 films is superior to the Ta2O5 dielectric films and is comparable to the lead-zirconate-titanate ferroelectric films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354744
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  • 6
    Electronic Resource
    Electronic Resource
    Activation mechanism of implanted boron in a Si substrate (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5190-5194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recrystallization and dopant activation in the BF2+ implanted samples with a 110 keV/5×1015 cm−2 condition into a Si substrate and annealed with different heating rates to various preset temperatures for zero holding time have been studied. A higher heating rate yielded a higher carrier mobility and a better crystallinity. A statistical model was proposed to characterize the dopant activation. The activated dopant concentration n was expressed as γ exp(−Ea/kT). The pre-exponential term γ is a function of critical temperature Tc, due to a finite melting point of Si, and heating rate. Both the effective activation energy Ea and Tc values decreased with increasing heating rate. With increasing heating rate, the γ term rapidly decreased at low rates due to the shortened effective annealing time, but showed slight increase at high rates due to the decreased Tc value. Low heating rates facilitated the dopant activation via the γ term, while high heating rates enhanced the activation efficiency via the Ea term.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352000
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  • 7
    Electronic Resource
    Electronic Resource
    O(3P) attack on boranes. II. B5H9 (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 7076-7083 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: When B5H9 is injected into a stream of He that is carrying O(3P) atoms (approximately 100/1), at a total pressure of 5–15 Torr, a blue-green flame develops. The major chemiluminescent species is BO(A 2Π). While its translational and rotational temperatures are ≈350 K, the vibrational temperature in the A state is high, ≈3800 K. From among the many products of this reaction, the OH radical can be most easily quantitated by measuring the intensity of its laser-induced fluorescence. The central streamline from a flow-tube reactor was extracted into an evacuated plenum via a pinhole. The time-intensity profile was calibrated using C2H6 for the fuel. Check runs were made with B2H6. A multistep mechanism was developed for B5H9+O(3P) that simulates the shape as well as the magnitude of the OH concentration over a reactor residence time 0.5–10 ms. Less than a dozen crucial reactions were identified by means of an extended sensitivity analysis. Breakdown schemes for the oxidation of B2H6 and B5H9 have been developed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460241
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  • 8
    Electronic Resource
    Electronic Resource
    Electronic structure, binding energies, and interaction potentials of transition metal clusters (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 3735-3747 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The linear combination of atomic orbitals discrete variational method is used to investigate the electronic structure and interatomic interactions of small transition metal particles in the local density theory. Binding energy curves to two-, three-, and four-atom clusters of Fe, Ni, and Pt are calculated at different geometries, and some Fe–Ni clusters are also studied. We thus determined effective pairwise potentials, and three- and four-body effects in an energy expansion by fitting to the binding-energy vs distance data. Use of these data in generating effective potentials for molecular dynamics simulations is discussed. Relativistic effects are estimated for the Pt systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459745
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  • 9
    Electronic Resource
    Electronic Resource
    Shallow junctions formed by BF+2 implantation into thin CoSi films and rapid thermal annealing (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1323-1325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of rapid thermal annealing (RTA) on the shallow p+n junctions formed by BF+2 implantation into thin CoSi films on Si substrates are discussed, with comparison to the implantation into thin Co films. Excellent junctions can be achieved via conventional furnace annealing (CFA) for both the samples prepared by implanting dopant through metal (ITM) and metal silicides (ITS) films. For the RTA process, however, the junction formation for ITS was hindered, with the diodes made by ITM being much better than those by ITS due to a deeper as-implanted profile. Although the problem of knock-on Co induced by heavy dopant implant present in making n+p junctions by ITM can be largely reduced by using ITS, ITS is inferior for forming p+n junctions by RTA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358420
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  • 10
    Electronic Resource
    Electronic Resource
    Formation of shallow p+n junctions by BF+2 implantation into thin polycrystalline Si films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3887-3892 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excellent shallow p+n junctions have been formed by implanting BF+2 ions into thin polycrystalline Si films and subsequent annealing. The samples implanted with 5×1015 cm−2 at 50 keV show a leakage of 1 nA/cm2 and a junction depth of about 0.05 μm after a 800 °C annealing. Various implant and annealing cases were examined to determine and characterize their effects on the resultant junctions. High energy implantations (125 and 150 keV) exhibit poor characteristics at all annealing temperatures because the Si substrates are severely damaged. However, the specimens implanted below 100 keV result in excellent diode characteristics for all implantation doses after an 800 °C annealing since the implantation defects are confined in the poly-Si layer. The major factors affecting the junction depth were found to be the implantation energy and annealing temperature, while a minor for the implantation dosage. Furthermore, the effects of the subsequent silicidation on the resultant junction characteristics were also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357393
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