ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Self-assembled nanowires have attracted much attention due to their potentialapplications in electronics and optoelectronics. A recent interest in Mn catalyzed GaAs nanowiresare due to their potential use in spintronic devices at nanoscale. High densities of Au- and Mncatalyzedself-assembled GaAs nanowires (NWs) with diameter in the range of 20 to 200 nm andlength of few microns were synthesized by molecular beam epitaxy (MBE) on different substrates atvaried substrate temperatures. These nanowires were investigated by means of μ-Ramanspectroscopy at room temperature. The Raman spectra from NWs show an energy downshift and abroadening of the LO and TO phonon lines that differ from those of epitaxial GaAs. We suggestthat those downshift and broadening are due to the relaxation of the q=0 selection rule in thepresence of structural defects in the nanowires. The results indicate that the use of Mn instead of Auas growth catalyst does not affect the structural quality of the nanowires drastically
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.31.23.pdf
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