ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junctionfield effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS= 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V fornormally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switchinglosses. The dependence of switching losses from gate resistor is nearly linear, suggesting thatchanging the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt.Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of thehigh internal p-type gate layer resistance. Inductive switching numerical analysis suggested the stronginfluence of channel doping conditions on the turn-on switching performance. The fast switchingnormally-off JFET devices require heavily doped narrow JFET channel design
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1067.pdf
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