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  • 2005-2009  (3)
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Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Numerical Control Interpolation Algorithm of Aspheric Surface Based on the Genetic Algorithms and Neural Network (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 364-366 (Dec. 2007), p. 25-29 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: When the Neural Network model is used to interpolate the non-circular curves, there areshortcomings of converging slowly and getting into the local optimum easily. A novel numericalcontrol interpolation algorithm based on the GA (Genetic Algorithms) and NN (Neural Network)was introduced for the ultra-precision machining of aspheric surfaces. The algorithm integrated theglobal searching of GA with the parallel processing of NN, enhanceed the convergence speed andfound the global optimum. At the end, the quintic non-circular curve was taken as an example to dothe emulation and experiment. The results prove that this algorithm can fit the non-circular curveaccurately, improve the precision of numerical control interpolation and reduce the number ofcalculating and interpolation cycles
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.364-366.25.pdf
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Anti-Weak Localization of the Two Dimensional Electron Gas in Modulation-Doped Al〈sub〉x〈/sub〉Ga〈sub〉1-x〈/sub〉N/GaN Single Quantum Well (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 475-479 (Jan. 2005), p. 1787-1790 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The weak-localization of the two-dimensional electron gas (2DEG) in amodulation-doped Al0.22Ga0.78N/GaN single quantum well has been investigated through the magnetoresistance measurements. The elastic scattering time τε, dephasing time τφ and spin-orbit(s-o) scattering time τso at various temperatures are obtained. The fitting parameters indicate that the inelastic scatterings to the 2DEG are mainly due to the piezoelectric field and the alloy disorder in the AlxGa1-xN barrier. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the anti-weak localization is observed clearly, which is due to the strong spin-orbit interaction. The spin-orbit effect dominates the quantum correction of the conductivity in the upper subband. The intersubband scattering becomes stronger with increasing temperature
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/09/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.1787.pdf
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Infrared Studies of GaN〈sub〉1-x〈/sub〉P〈sub〉x〈/sub〉 Ternary Alloys (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 475-479 (Jan. 2005), p. 1669-1672 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Infrared reflectivity measurements of GaN1-xPx alloys and quantitative fittings using Lorentz model have been carried out. In the GaN1-xPx alloys, two competitive mechanisms that determine the carrier concentration have been put forward. The one is from the effect of the isoelectronic traps which decrease the carrier concentration while the other is from the effect of defects which increase the carrier concentration. The calculated results of imaginary part of the elastivity of GaN and GaN1-xPx alloys show that the longitudinal optical phonon-plasmon (LPP) modes shift to high frequency direction and its linewidth gradually broadens with increasing carrier concentration in GaN1-xPx, indicating that the coupling of LPP modes gradually enhances and the damping of LPP modes gradually augments
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/09/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.1669.pdf
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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