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  • 2005-2009  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Heteroepitaxial Growth of 3C-SiC on Si (111) at Low Substrate Temperature by Plasma Assisted CVD (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 235-238 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In order to demonstrate the formation of 3C-SiC film on Si (111) at low substrate temperature, the effects of C3H8 on the crystallinity of the films on Si (111) have been investigated by changing the flow rate of C3H8 at the substrate temperature of 950 °C. Nearly single-crystalline 3C-SiC film grew under the ratio of the flow rate of C3H8 to the flow rate of SiH4 (C/Si) of 2 - 2.5. From these results, it is suggested that C/Si shifts into higher with decreasing the substrate temperature. The crystallinity has been investigated by a reflection electron diffraction (RED) and a X-ray diffraction (XRD). The thickness and the surface roughness of the films were investigated by an ellipsometric measurement
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.235.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 183-186 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The effects of C3H8 on the microstructures of the films on Si (111) have beeninvestigated by changing the concentration of C3H8 from 0.5% to 5%. 3C-SiC film on Si (111)grown at the C3H8 concentration of 1% with relatively high flow rate of SiH4 (30 sccm) is singlecrystal and free from the contamination of W2C. By comparing the deposition rates of the films onSi (111) and Si (100) at different concentrations of C3H8, SiC growth on Si (111) is much moredependent on C3H8 concentration than that on Si (100). From these results it is suggested that SiCgrowth on Si (111) is strongly influenced by hydrogen radicals generated from C3H8 decompositionby the plasma and forms single crystal easier than on Si(100). It is expected that 3C-SiC epitaxialgrowth on Si (111) has higher deposition rate and lower substrate temperature than on Si (100). Thecrystallinity has been investigated by a reflection electron diffraction (RED) and a X-ray diffraction(XRD). The thickness and the surface roughness of the films were investigated by an ellipsometricmeasurement
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.183.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
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