ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The effects of hydrogen and proton irradiation on stacking fault formation in 4H-SiC are investigated by an optical pump-probe method of imaging spectroscopy. We report optically stimulated nucleation and expansion of stacking faults (SFs) in 0.6 keV 2H+ implanted n-/n+ and p+/n-/n+ structures. The activation enthalpy for recombination enhanced dislocation glide (REDG) in hydrogenated samples (~0.25 eV) is found to be similar to that in a virgin material. Our resultsindicate that SFs mainly nucleate at the internal n-/n+ interface, beyond reach of hydrogen, thus justifying minor SF passivation effect. No REDG could be initiated optically in 2.5 MeV proton irradiated samples due to radiation defects providing alternative recombination channels to bypass the REDG mechanism. The radiation damage was verified by DLTS, revealing several new levels below EC in the range 0.4-0.80 eV, and by PL, showing the onset of D-center related luminescenceband and concurrent increase of the nonradiative recombination rate
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.327.pdf
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