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  • 2000-2004  (23)
  • 1995-1999  (70)
  • 1950-1954  (4)
  • 1910-1914  (1)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5959-5964 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed isothermal annealing on a hydrogenated amorphous silicon (a-Si:H) sample deposited at low temperature in a glow discharge reactor. In order to change the hydrogen bonding configuration without affecting the silicon structure we choose a relatively low annealing temperature. We studied the dependence on the annealing time of the dark conductivity, photoconductivity, light-induced degradation of the photoconductivity, optical gap, vibrational spectra, and subgap defect density. As the annealing time increased we found an increase in the dark conductivity activation energy. This shift of the dark Fermi level toward the valence band was correlated with the growth of a peak in the density of states below midgap. From the vibrational spectra we obtained the microstructure parameter, which is indicative of the amount of hydrogen bonded as polihydrides and/or to some sort of internal surface. We used the bond-breaking model to fit photoconductivity decay as a function of illumination time, and we found a correlation between the Staebler–Wronski susceptibility and the microstructure parameter. This would mean that the stability of the material concerning light-induced degradation is related to the way hydrogen is attached in the amorphous network. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 9151-9159 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Single pentacene molecules containing 13C or 1H in a pentacene-d14 doped p-terphenyl crystal have been studied by fluorescence autocorrelation. The triplet dynamics has been analyzed and a systematic dependence of the S1→T1 intersystem crossing rate on isotopic composition was found. This variation is discussed in terms of a modulation of the near resonance of the first excited singlet state S1 and vibrational levels of an intermediating triplet state T3 which results from the distinct isotope dependence of the zero-point energy of both electronic states. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 5734-5744 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report the application of nanosecond transient grating spectroscopy to probe the excited state level structure of NO2 near 487.9 nm. Intensity and polarization grating transients were obtained in one-color (DFWM) and two-color (TC-RFWM) configurations. Most grating transients exhibit pronounced beats, arising from coherences among excited state hyperfine levels, which are enhanced in polarization grating experiments. Analysis of these beats yields detailed information on the excited state hyperfine level structure at a resolution 100 times smaller than the bandwidth of the applied laser fields. The grating transients are compared to predictions of the grating decomposition method (GDM) using Fourier transform analysis. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 8615-8625 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have investigated the electron paramagnetic resonance (EPR) of self-assembled stearic acid films adsorbed on an Al2O3-film. Doping the film with spin labels at different positions of the alkyl chain in order to make the films accessible for EPR spectroscopy provides an opportunity to investigate the rotational motion of the molecule along the alkyl chain. The temperature dependent EPR spectra show a strong dependence of the rotational motion of the molecules with variation of the location of the spin label along the chain. We study the rotational motion by means of the EPR line shape analysis. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3108-3112 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a very good force resolution for tuning fork based shear force microscopy as used for feedback regulation in scanning near-field optical microcopy (NSOM). The sensitivity and dynamics of fiber tips attached to 100 kHz tuning forks are investigated both experimentally and theoretically applying a finite element analysis. Operating the tuning fork at vibration amplitudes smaller than 10 nm allows to discriminate between viscous damping due to capillary wetting, and fiber bending upon tip-sample approach to hydrophilic sample surfaces indicating the direct transition from "noncontact operation" (pure viscous damping due to contamination layer) down to tip-sample contact. Viscous damping manifests in frequency shifts of less than 50 mHz, as deduced from resonance curves recorded under feedback control. For relative amplitude changes of less than 0.5% the viscous damping force acting lateral on the fiber tip is calculated to ∼100 pN using the finite element method. This detection limit proves that tuning fork based shear force control is superior to other feedback mechanisms employed in NSOM. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4853-4856 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe an insert for optical and magnetic-resonance experiments on single molecules in a solid matrix at liquid-helium temperatures. The experimental arrangement allows in situ adjustment of the focusing lens and of the sample. A parabolic mirror serves to collect the fluorescence emission and to direct the light onto a photodetector. Microwaves can be irradiated through a coil around the sample while a superconducting magnet provides the possibility of a stationary magnetic field. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 313-314 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe the design and performance of a compact ultrahigh vacuum sample holder, which allows (1) sample transfer, (2) liquid-nitrogen cooling, (3) heating by electron bombardment, and (4) temperature measurement in direct proximity to the sample. The device operates from close to liquid-nitrogen temperatures up to temperatures of 800–900 K in the steady-state regime with peak temperatures in excess of 1700 K and allows easy and reliable sample transfer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 451-455 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular beam epitaxial growth and n type doping of Hg0.80Cd0.20Te(112)B have been investigated. The surface morphology has been determined via atomic force microscopy and is appreciably different from that of the (001) orientation; long ridges and trenches are observed whose height difference is considerably less than that of the nearly elliptically shaped mounds found in (001) alloys. The mobility has been optimized with regard to growth parameters such as the Hg/Te flux ratio resulting in a maximum value of 4.0±0.6×105 cm2/(V s) for an undoped sample at low temperatures. n type Hg0.80Cd0.20Te(112)B has been grown using iodine in the form of CdI2 as a dopant. The maximum electron concentration due to iodine doping has been determined after an Hg vacancy anneal to be 4.2±0.7×1018 cm−3. Typical mobilities at low temperatures are 4.0×104 and 1.0×105 cm2/(V s) for electron concentration levels of 1.0×1017 and 5.0×1016 cm−3, respectively. By means of secondary ion mass spectroscopy the iodine concentration has been determined and hence the degree of activation. The electron concentration is proportional to that of iodine with a 100% electrical activation for concentrations up to (approximate)1018 cm−3. At higher concentrations compensation is observed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 7094-7099 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe an approach to scanning capacitance microscopy. A mixing technique is employed for imaging local capacitance variations simultaneously with the sample topography using an atomic force microscope (AFM) with a conductive tip. A SiO2/Si sample with lateral pn junctions formed by ion implantation has been investigated. Microwave signals incident on the metal–oxide–semiconductor (MOS) structure formed by the AFM tip and the sample give rise to mixing signals due to the nonlinear voltage dependence of the space charge capacitance in the Si. In our experiments two microwave input signals with frequencies f1 and f2 and a variable dc bias voltage were applied to the tip-sample MOS structure. The dependence of the generated sum frequency and third harmonic signals on the dc sample voltage shows that the f1+f2 and 3 f signals are proportional to dC/dV and d2C/dV2, respectively. Images of the sum frequency and third harmonic signals delineating the pn junctions on our model sample are presented and the dc bias voltage dependence of the images is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4601-4603 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic reversal mechanism of tapered permalloy bars with holes in the center was studied using a Magnetic Force Microscope with in situ magnetic field capability. The samples studied were lithographically patterned from a 20-nm-thick NiFe film using a subtractive process to create tapered bars 18 wide×348 μm long. The easy axis of the permalloy is parallel to the long axis of the bar. In the center of the tapered bar was either a 10, 5, or 3 μm diameter hole. The remnant state after saturation parallel to the long axis of the bar is a large domain magnetized along the saturating field direction except near the hole. The magnetization at the edge of the hole can be explained by considering edge pinning and the last direction of a saturating magnetic field. An inplane magnetic field parallel to the long axis of the bar reverses the magnetization by domain nucleation at the edge of the hole. After the bar has reversed, the same type of wall structure is seen as in the remnant state. As the magnetic field is increased further, the magnetization rotates away from parallel to the edge of the hole, as seen by the emergence of surface poles along the hole edge. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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