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  • 1
    ISSN: 1534-4681
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 2197-2207 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The kinetics of HDO surface and bulk diffusion on ultrathin (25–192 BL; 90–700 Å) single-crystal H216O ice multilayers were studied using a combination of laser-induced thermal desorption (LITD) probing and isothermal desorption depth-profiling. The single-crystal hexagonal ice multilayers were grown epitaxially on a single-crystal Ru(001) metal substrate with the basal (001) facet of ice parallel to the Ru(001) surface. HDO surface diffusion on the single-crystal ice multilayer was not observed within the resolution of the LITD experiment at T=140 K. These LITD surface diffusion experiments yielded an upper limit to the HDO surface diffusion coefficient of Ds≤1×10−9 cm2/s at T=140 K. The bulk diffusion coefficients were measured along the c axis of the hexagonal ice crystal which is perpendicular to the (001) plane. HDO was observed to diffuse readily into the underlying H216O ice multilayer. The measured HDO bulk diffusion coefficients ranged from D=2.2(±0.3)×10−16 cm2/s to D=3.9(±0.4)×10−14 cm2/s over the temperature range from 153 to 170 K. The HDO bulk diffusion coefficients were measured for H216O thicknesses of 25–192 BL (1 BL=1.06×1015 molecules/cm2) and initial HDO adlayer thicknesses of 2–9 BL. The HDO bulk diffusion was independent of H216O film thickness and initial HDO coverage. Arrhenius analysis of the temperature-dependent bulk diffusion coefficients yielded a diffusion activation energy of EA=17.0±1.0 kcal/mol and a diffusion preexponential of Do=4.2(±0.8)×108 cm2/s. Compared with extrapolations from macroscopic diffusion kinetics obtained earlier at temperatures close to the melting point, these bulk diffusion coefficients are larger and may reflect the perturbation of the ultrathin ice films induced by the nearby interfaces. The differences between these HDO diffusion kinetics and recently measured kinetics for H218O indicate that H/D exchange and molecular transport make comparable contributions to the HDO diffusion coefficient. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 46 (1954), S. 979-982 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 46 (1954), S. 1010-1013 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1001-1010 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface between the inorganic semiconductor p-type InP and the conjugated polymer poly(pyrrole) exhibits the electrical characteristics of a Schottky diode. Capacitance–voltage measurements yield an average barrier height of 0.62 ± 0.01 eV at temperature T =298 K. At the same temperature, the empirical quality factor, extracted from current–voltage measurements, is near unity. However, the current–voltage measurements show a deviation from thermionic emission theory as the temperature is reduced, as witnessed by the increase of the quality factor and the curvature in the Richardson plot. Such deviation is best explained by the barrier inhomogeneity model, in which the barrier becomes voltage dependent due to the interaction of a small low-barrier region with a higher surrounding potential, termed the "pinch-off" effect. Traditional current–voltage models, including image force lowering or an interfacial layer, cannot predict the temperature dependence of the current–voltage data, although thermionic field emission may facilitate current transport in the interfaces with a higher doped InP substrate. Furthermore, the probability of sufficiently energetic incident charge carriers crossing the interface, termed the transmission coefficient, is smaller than that observed in metal Schottky diodes.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6431-6441 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of current transport at the Schottky-type n-InP | poly(pyrrole) interface is presented. At room temperature, this interface exhibits an average quality factor of n=1.02±0.02, a C–V barrier height of qφbCV=0.78±0.01 eV, and a surface recombination velocity over two orders-of-magnitude slower than at ideal n-InP metal interfaces. These latter two parameters imply an effective barrier height of 0.9 eV, which is among the highest values ever reported for an n-InP Schottky-type diode. The quality factor increases monotonically with decreasing temperature reaching a value of 1.23 at 98 K. Substantial curvature is also observed in a Richardson plot at reduced temperature. These temperature dependencies can be quantitatively modeled using thermionic emission theory in the presence of barrier inhomogeneities. Standard models, including thermionic emission with image force effects, interfacial layer models with and without surface states, and tunneling, do not adequately explain the temperature dependence of the quality factor and the curvature in the Richardson plot. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 433-445 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The use of temperature-dependent current–voltage and capacitance–voltage measurements in the determination of transmission coefficients, which can be related to various other heterogeneous charge-transfer rate constants, is analyzed for semiconductor interfaces characterized by a spatial distribution of barrier heights. The level of error introduced by the unknowing neglect of heterogeneity is analyzed using a discrete parallel network of regions with potentially voltage and temperature dependent effective areas and potential barriers. In general, the unknowing neglect of heterogeneity results in an overestimation of the transmission coefficient calculated from barrier heights based on capacitance–voltage measurements and an underestimation when based on barrier heights from temperature dependent current–voltage measurements (Richardson plots). Of particular focus is the calculation of transmission coefficients at semiconductor interfaces that exhibit anomalous behavior, most notably ideality or quality factors greater than unity, due to small-scale, "pinched-off," barrier inhomogeneities characterized by voltage-dependent effective barriers. In general, the meanings of various empirical treatments of current–voltage data in light of a voltage-dependent barrier height distribution are clarified with a particular focus on the extraction of equilibrium exchange current densities and the meaning of Richardson plots. To be specific, the model of Tung for pinched-off barrier inhomogeneities is used to demonstrate that multiple orders-of-magnitude errors in the calculation of transmission coefficients are possible with systems exhibiting only mildly anomalous behavior (ideality factors less than 1.3) if heterogeneity is neglected. The conditions of applied bias, dopant density, and temperature where the error is minimized are discussed along with the criteria for the rigorous extraction of transmission coefficients. The greatest confidence in the transmission coefficients occurs when the ideality factor is unity and the capacitance–voltage barrier agrees with the Richardson plot barrier. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 117 (1995), S. 6605-6606 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 74 (1952), S. 5798-5799 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 75 (1953), S. 1244-1245 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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