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  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science, Ltd
    International journal of cosmetic science 25 (2003), S. 0 
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Skin-cleansing compositions based on alkyl carboxylates (soaps) have a higher irritation potential than those based on syndet surfactants such as alkyl isethionates or alkyl ether sulphates. Contributing factors include inherent differences in the irritation potential of soaps and syndet surfactants, pH-induced changes in surfactant solution chemistry, and the direct effects of pH on the physical properties of the stratum corneum (SC). Past work has not directly addressed the effect of solution pH on the SC itself and its potential role in cleanser-induced skin irritation. In the current work, alterations to SC properties induced by buffered pH solutions and two strongly ionizable surfactants, sodium dodecyl sulphate and sodium lauryl ether sulphate, at different pH values are measured. By utilizing optical coherence tomography (OCT) and infrared (IR) spectroscopy we have directly measured physical changes in SC proteins and lipids. Our results indicate that SC swelling, which reflects alterations to SC structural proteins, is increased significantly at pH 10, compared to pH 4 and 6.5. The transition temperature (Tm) of SC lipids is found to increase at pH 10, compared to pH 4 and 6.5, suggesting a more rigid SC lipid matrix. Surfactants cause a further increase in swelling and lipid rigidity. Some aspects of what these results mean for SC physical properties as well as their implications to potential mechanisms of surfactant-induced skin irritation are discussed.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3828-3830 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a simple shadow mask method to fabricate electrodes with nanometer scale separation. Metal wires with gaps are made by incorporating multiwall carbon nanotubes or single-wall carbon nanotube (SWNT) bundles into a trilayer electron beam lithography process. The simple, highly controllable, and scaleable method has been used to make gaps with widths between 20 and 100 nm and may be extended to gap sizes of 1 nm. We report electron transport measurements of individual SWNTs bridging nanogaps with electrode spacings of approximately 20 nm. Metallic SWNTs exhibit quantum dot behavior with an 80 meV charging energy and a 20 meV energy level splitting. We observe a strong field effect behavior in short semiconducting SWNT segments, evidence for diffusive electron transport in these samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2767-2769 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-wall carbon nanotubes (SWNTs) were used to augment the thermal transport properties of industrial epoxy. Samples loaded with 1 wt % unpurified SWNT material showed a 70% increase in thermal conductivity at 40 K, rising to 125% at room temperature; the enhancement due to 1 wt % loading of vapor grown carbon fibers was three times smaller. Electrical conductivity data showed a percolation threshold between 0.1 and 0.2 wt % SWNT loading. The Vickers hardness rose monotonically with SWNT loading up to a factor of 3.5 at 2 wt %. These results suggest that the thermal and mechanical properties of SWNT-epoxy composites are improved, without the need to chemically functionalize the nanotubes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3326-3328 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use scanning gate microscopy to precisely locate the gating response in field-effect transistors (FETs) made from semiconducting single-wall carbon nanotubes. A dramatic increase in transport current occurs when the device is electrostatically doped with holes near the positively biased electrode. We ascribe this behavior to the turn-on of a reverse biased Schottky barrier at the interface between the p-doped nanotube and the electrode. By positioning the gate near one of the contacts, we convert the nanotube FET into a rectifying nanotube diode. These experiments both clarify a longstanding debate over the gating mechanism for nanotube FETs and indicate a strategy for diode fabrication based on controlled placement of acceptor impurities near a contact. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 666-668 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dense, thick films of aligned single wall carbon nanotubes and nanotube ropes have been produced by filtration/deposition from suspension in strong magnetic fields. Electrical resistivity exhibits moderate anisotropy with respect to the alignment axis, while the thermopower is the same when measured parallel or perpendicular to this axis. Both parameters have identical temperature dependencies in the two orientations. Thermal conductivity in the parallel direction exceeds 200 W/mK, within a decade of graphite. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 931-933 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stimulated emission at 5.1 μm was demonstrated from a broad area In1−xAlxSb/InSb heterostructure diode laser grown by molecular beam epitaxy. For a 5 μs pulse and a 500 Hz repetition rate the threshold current density was 1480 A cm−2 at 77 K and the maximum operating temperature was 90 K at a current density of 2680 A cm−2. Maximum peak power output was estimated to be 28 mW per facet at 77 K and 4500 A cm−2.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 481-483 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InSb enhancement-mode, metal-insulator-semiconductor, field-effect transistors with 1 μm gate lengths have been fabricated. When operated at room temperature with less than 0.5 V applied between the source and drain, the transistors have a static dynamic range in excess of 20 dB, a cut-off frequency (fT) of 14 GHz and a transconductance, at 1 GHz, of 230 mS mm−1. Analysis of the parasitic capacitances indicates an intrinsic fT of about 90 GHz. The static electron mobility in the channel is 2×104 cm2 V−1 s−1, so a carrier velocity of about 3.7×107 cm s−1 should be attained. This leads to a predicted frequency response of 84 GHz, in reasonable agreement with the intrinsic microwave data.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3014-3016 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a method to assemble single-wall carbon nanotube (SWNT) circuits using a tapping mode atomic force microscope. Nanotubes can be controllably translated, rotated, cut, and placed on top of one another by varying the tip–sample force, and the tip speed. These operations let us construct complex nanotube circuits, which are contacted using electron beam lithography. We present data from a circuit of two crossed SWNT bundles. The lower bundle behaves as two quantum dots in series, separated by a tunnel barrier created at the junction. Gate voltages can tune the number of charges on each dot and the tunnel barrier transmission. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 107 (2000), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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