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  • 2000-2004  (1)
  • 1995-1999  (12)
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  • 1
    Electronic Resource
    Electronic Resource
    Optical spectroscopy study of the role of Ag in laser ablated YBa2Cu3O7−δ thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5204-5205 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found evidence through optical spectroscopy that AgO is indeed generated in the laser plume during pulsed laser deposition of YBa2Cu3O7−δ (YBCO) thin films using Ag-doped YBCO targets. This supports our earlier conjecture that formation of AgO in the plume and its subsequent dissociation at the elevated substrate temperature (since AgO is unstable above 350 °C) provides active oxygen to the YBCO lattice, thereby increasing oxygen incorporation during growth of YBCO thin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359694
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  • 2
    Electronic Resource
    Electronic Resource
    Surface resistance and residual losses of Ag-doped YBa2Cu3O7−δ thin films on sapphire (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4116-4118 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality Ag-doped YBa2Cu3O7−δ thin films have been grown by laser ablation on R-plane 〈11¯02〉 sapphire without any buffer layer. Thin films have been found to be highly c-axis oriented with Tc=90 K, transition width ΔT≤1 K, and transport Jc=1.2×106 A cm−2 at 77 K in self-field conditions. The microwave surface resistance of these films measured on patterned microstrip resonators has been found to be 530 μΩ at 10 GHz at 77 K which is the lowest reported on unbuffered sapphire. Improved in-plane epitaxy and reduced reaction rate between the substrate and the film caused due to Ag in the film are believed to be responsible for this greatly improved microwave surface resistance. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359496
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced magnetoresistance in as-deposited oxygen-deficient La0.6Pb0.4MnO3−y thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6861-6863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The La0.6Pb0.4MnO3(LPMO) thin films were in situ deposited at different oxygen partial pressure and at a substrate temperature of 630 °C by pulsed laser deposition. The films grown at lower oxygen partial pressures showed an increase in lattice parameter and resistivity and a decrease in the insulator–metal transition temperature as compared to the stoichiometric LPMO thin film grown at 400 mTorr. Further, these oxygen-deficient thin films showed over 70% giant magnetoresistance (GMR) near the insulator–metal transition temperature against the 40% GMR in the case of stoichiometric thin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360727
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  • 4
    Electronic Resource
    Electronic Resource
    Ferroelectric properties of Bi2VO5.5 thin films on LaAlO3 and SiO2/Si substrates with LaNiO3 base electrode (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1160-1164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric bismuth vanadate Bi2VO5.5 (BVO) thin films have been grown on LaAlO3 (LAO) and SiO2/Si substrates with LaNiO3 (LNO) base electrodes by the pulsed laser deposition technique. The effect of substrate temperature on the ferroelectric properties of BVO thin films, has been studied by depositing the thin films at different temperatures. The BVO thin films grown on LNO/LAO were textured whereas the thin films grown on LNO/SiO2/Si were polycrystalline. The BVO thin films grown at 450 °C exhibited good ferroelectric properties indicating that LNO acts as a good electrode material. The remanent polarization Pr and coercive field Ec obtained for the BVO thin films grown at 450 °C on LNO/LAO and LNO/SiO2/Si were 2.5 μC/cm2, 37 kV/cm and 4.6μC/cm2, 93 kV/cm, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360351
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  • 5
    Electronic Resource
    Electronic Resource
    Electron states of benzene–Br2 donor–acceptor complex: HeI photoelectron spectroscopy and ab initio molecular orbital study (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 4395-4396 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: HeI photoelectron spectrum of weakly bonded π-donor complex of benzene with Br2 is obtained. Benzene orbitals are shifted to higher binding energy by 0.25 eV and the bromine orbitals to lower binding energy by about 0.5 eV due to the complex formation. Ab initio molecular orbital calculations predicted a weak π→σ* complex between benzene and bromine having a C6v symmetry. The charge transfer is from the benzene π cloud to the bromine orbital. The magnitude of charge transfer computed from natural bond orbital analysis is 0.002. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472258
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetotransport properties in thin films of charge-ordered materials (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8057-8060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of Pr0.7Ca0.3MnO3, Nd0.5Ca0.5MnO3, and Nd0.5Sr0.5MnO3 have been fabricated by pulsed-laser deposition, and the magnetic and electrical transport properties of these films were compared with their bulk properties. All the films grow in the (101) direction on LaAlO3(100). Electrical transport measurements carried out with and without magnetic field have shown dρ/dT〈0 in these thin films. Application of a magnetic field has produced an increase in the conductivity of the films. Magnetization studies showed that Nd0.5Sr0.5MnO3 exhibits ferromagnetic behavior at 260 K and antiferromagnetic below 130 K. This is close to the bulk magnetic behavior of Nd0.5Sr0.5MnO3. Pr0.7Ca0.3MnO3 showed a ferromagnetic transition below 130 K while Nd0.5Ca0.5MnO3 remained paramagnetic down to low temperatures, showing a deviation from the magnetization exhibited by their respective bulks. Deviation in the properties of the thin films from the bulk solids is attributed to the growth of the films in a more symmetric structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372369
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical resistivity and enhanced magnetoresistance in (La0.6Pb0.4MnO3/La0.85MnO3−δ)n superlattices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1058-1062 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistivity and magnetoresistance studies have been carried out on (La0.6Pb0.4MnO3/La0.85MnO3−δ)n (n=30 periods) ferromagnetic/paramagnetic oxide multilayers fabricated by pulsed laser deposition. An epitaxial film of La0.6Pb0.4MnO3 is ferromagnetic and metallic below 320 K, whereas that of La0.85MnO3−δ is a paramagnetic (and antiferromagnetic at low temperatures) insulator. The multilayers showed an insulator-to-metal transition at 285±5 K. The magnetoresistances of these multilayers were about 60%–75% at the transition temperature in 6 T magnetic field. The magnetoresistance is also shown to be dependent on the thickness of the ferromagnetic oxide layer. A maximum magnetoresistance of 75% was observed for a [La0.6Pb0.4MnO3(50 Å)/La0.85MnO3−δ(20 Å)]30 superlattice as against 25% in a single La0.6Pb0.4MnO3 film at 285 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369228
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  • 8
    Electronic Resource
    Electronic Resource
    Transport properties and colossal magnetoresistance in epitaxial La0.67Cd0.33MnO3 thin film (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2701-2703 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An optimal composition of La0.67Cd0.33MnO3 was synthesized by ceramic route. The compound crystallized in a rhombohedral structure with lattice parameters a=5.473(4) Å and α=60°37′. Resistivity measurement showed an insulator-to-metal transition coupled with a ferromagnetic transition of around 255 K. Epitaxial thin films were fabricated on the LaAlO3 (100) substrate by a pulsed laser deposition technique. The psuedocubic lattice parameter a of the film is 3.873(4) Å. The insulator-to-metal transition of the film was observed at 250 K which is comparable with the bulk value. The film was ferromagnetic below this temperature. Magnetoresistance defined as ΔR/R0=(RH−R0)/R0 was over −86% near the insulator-to-metal transition temperature of 240 K at 6 T magnetic field and over-30% at relatively low fields of 1 T. No magnetoresistance was observed at low temperatures in the film unlike in the polycrystalline sample, where about a 40% decrease in resistance was observed on applying 6 T magnetic field due to the spin dependent scattering at the grain boundaries. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120182
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  • 9
    Electronic Resource
    Electronic Resource
    Anisotropic electrical transport property in La4BaCu5O13+δ and La4BaCu4NiO13+δ epitaxial thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1598-1600 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of La4BaCu5O13+δ and La4BaCu4NiO13+δ oxides are grown with a-b plane parallel to (100) of LaAlO3 and SrTiO3 by pulsed-laser deposition. The conductivity measurements performed along the c direction using LaNiO3 as the electrode show metallic behavior whereas they show semiconducting behavior in the a-b plane. Anisotropic transport property of these thin films is explained on the basis of nearly 180° connected Cu–O–Cu chains with an average Cu–O distance of 1.94 Å along the c direction and nearly 180° and 90° connected Cu–O–Cu chains in the a-b plane with short and long Cu–O distances ranging from 1.863 to 2.303 Å. YBa2Cu3O7−x has been grown along (00l) on La4BaCu5O13+δ and shows a Tc of 88 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124766
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  • 10
    Electronic Resource
    Electronic Resource
    Colossal magnetoresistance in epitaxial La(1−x−y)NayMnO3 thin film (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2909-2911 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have synthesized La0.83Na0.11MnO2.93 by heating La2O3 and MnCO3 in NaCl melt at 900 °C. The exact composition was arrived by analyzing each ion by an independent chemical method. The compound crystallized in a rhombohedral structure and showed an insulator-to-metal transition at 290 K. Epitaxial thin films were fabricated on LaAlO3 (100) using a pulsed laser deposition technique. The film also showed an insulator-to-metal transition at 290 K. Magnetoresistance [ΔR/R0=(RH−R0)/R0] was −71% near the insulator-to-metal transition temperature of 290 K at 6 T magnetic field. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119050
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