ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Refractory metal silicides, namely NbSi2, TaSi2, WSi2, and MoSi2, were successfully synthesized by using a metal vapor vacuum arc (MEVVA) ion source to implant the respective metal ions with high current density into Si(111) and Si(100) wafers. The implantation was conducted at room temperature with an extracted voltage of 40 kV. When the current densities of the refractory metal ions were up to 65 μA/cm2, the equilibrium hexagonal NbSi2 and TaSi2 phases were formed at an implantation dose of 3×1017 ions/cm2, while the hexagonal WSi2 and MoSi2 phases were formed at a dose of 5×1017 ions/cm2. With increasing the current density up to 90 μA/cm2, the transition of the hexagonal WSi2 and MoSi2 phases to their most stable tetragonal structures was observed. Postannealing at 750 and 950 °C resulted in the formation of the unique tetragonal WSi2 and MoSi2 phases, respectively. The electrical property of the MEVVA-synthesized refractory metal silicides was measured for both as-implanted and postannealed wafers. In addition, the formation of the refractory metal silicides by MEVVA implantation is discussed in terms of the beam heating effect caused by high current ion implantation. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359537
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