ISSN:
1432-0630
Keywords:
68.55.+b
;
73.60.FW
;
81.15.Gh
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Conductivity of photo-CVD microcrystalline silicon (μc-Si:H) in wide range of dopant gas concentration (10−5〈PH3/SiH4, B2H6/SiH4〈10−2) is investigated. As compared with a-Si:H, the conductivity of the film is improved more than two orders of magnitude by microcrystallization for a wide range of dopant concentration at a deposition temperature of as low as 150°C. This indicates the suitability of photo-CVD for low temperature processing. A conductivity minimum is found at a doping ratio of about B2H6/SiH4=1×10−5.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00343422
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