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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic property of GdCo4B in high field : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5914-5916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependence of saturation magnetization and magnetization process of a field oriented sample in a pulsed field up to 13T at several temperatures are measured for GdCo4B. The following main conclusions have been obtained: (1) the Curie temperature and the compensation point are 517 K and 421 K, respectively, (2) the averaged Co-moment is 1.04 μB, suggesting the 6i-Co has about a half of that of the 2c-site Co, (3) the exchange parameter between Gd and Co spins, JGd-Co/k, is estimated to be 8.5 K from the temperature dependence of Gd-sublattice magnetization, (4) Gd-sublattice anisotropy constants have been estimated as follows; 5.8×106 erg/c.c. at T=78 K, 3.9×106 erg/c.c. at T=147 K and 2.9×106 erg/c.c. at T=225 K, which are well explained by Gd–Gd and Gd–Co dipole–dipole interactions, and (5) the anisotropic saturation moment has been observed and can be attributed to anisotropic Co moment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353519
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  • 2
    Electronic Resource
    Electronic Resource
    Pressure effect on magnetic transition temperature and magnetic phase diagram of Mn2−xCoxSb : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4642-4644 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pressure effects on spin-flop transition temperature (Tsf) of Mn2−xCoxSb have been measured in order to study the nature of spin-flop phase transitions. The magnetic phase diagrams for Tsf versus concentration and for Tsf versus pressure have been determined. Tsf increases with increasing applied pressure (dTsf/dp=2.9 K/kbar for x=0.05, dTsf/dp=3.7 K/kbar for x=0.10, dTsf/dp=3.3 K/kbar for x=0.15, and dTsf/dp=2.7 K/kbar for x=0.20). On the other hand, Tsf decreases slowly with x up to (approximately-equal-to)0.05 and increases rapidly under further increasing x at normal atmospheric pressure. On the basis of these results, the microscopic origin of the magnetic anisotropy of Mn2−xCoxSb is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348282
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetic properties of RCo4M (R=Y, Nd and Ho; M=B, Al and Ga) : 35TH ANNUAL CONFERENCE ON MAGNETISM AND MAGNETIC MATERIALS San Diego, California (USA) 29 Oct−1 Nov 1990 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5551-5553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic and crystallographic measurements have been made for the compounds RCo4M (R=Y, Nd, and Ho; M=B, Al, and Ga) to intercompare the magnetic properties of RCo4B, RCo4M (M=Al and Ga) and RCo5. The compounds RCo4B crystallize in the CeCo4B type structure, while RCo4M (M=Al and Ga) in the CaCu5 type. The following main conclusions have been obtained: (1) the Curie temperature and the averaged Co-moment of RCo4M (R=Y, Nd, and Ho; M=B, Al, and Ga) are lower and smaller than those of RCo5, respectively, and 6i-site Co-moment in RCo4B is smaller than the 2c-site Co-moment by the influence of the neighboring B-layer; (2) magnetocrystalline anisotropy of R-sublattice of RCo4B is stronger than that of RCo5, while that of RCo4Al is remarkably weaker than that of RCo5; (3) the Co-sublattice anisotropy constants of YCo4M (M=B and Al) are 20% or less of that of YCo5; and (4) JR-Co and JCo-Co, which are the exchange parameters of the atomic pairs in NdCo4M (M=B and Al), have been estimated to be JR-Co/k (approximately-equal-to) 7 K and JCo-Co/k (approximately-equal-to) 200 K, where k is the Boltzman constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348941
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  • 4
    Electronic Resource
    Electronic Resource
    Global investigation of III-V semiconductor phase diagram by nonempirical method (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1320-1330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By combining electronic theory with the cluster variation method of statistical mechanics, five types of III⋅III-V and seven types of III-V⋅V pseudobinary phase diagrams are calculated. All the phase diagrams demonstrate phase separation and it is revealed that the phase separation is driven by elastic energy contribution. The asymmetry of the phase boundary can be systematically explained in terms of lattice constants of the constituent binary ordered compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349588
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  • 5
    Electronic Resource
    Electronic Resource
    Anomalous magnetic properties of the compound SmCo3B2 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4912-4914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization measurements for the compound SmCo3B2 have been performed on loose powder in magnetic fields to 5 T and in the temperature region from 4.2 to 60 K. A small saturation moment of 0.18 μB/SmCo3B2 at T=4.2 K and its variation with increasing temperature suggest ferrimagnetic ordering in SmCo3B2, which is explained as the effect of a higher order crystalline field coefficient. A magnetic first order transition occurs at T=43 K and metamagnetism occurs in the narrow temperature region between 43 and 47 K, for which some possible discussions are given. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373200
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  • 6
    Electronic Resource
    Electronic Resource
    Picosecond time-resolved absorption spectrometer using a streak camera (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1415-1419 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A picosecond time-resolved absorption spectrometer is described. The apparatus consisting of a probe light source, a polychromator, and a streak camera enables us to observe time-resolved absorption spectra in the range from picoseconds to several nanoseconds, with 50 ps time resolution. The probe light has the properties of a wide range continuum spectrum from UV to near IR and is of several tens of nanoseconds in duration. Using this apparatus, with only a single laser shot, we can observe transient absorption both temporal and spectral simultaneously. This apparatus is useful for studying the primary process of photochemical dynamics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142460
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  • 7
    Electronic Resource
    Electronic Resource
    Simulation of the write field for T-shaped pole heads (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5419-5421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The write field distributions of T-shaped pole heads are presented. The maximum head field in the medium plane for T-shaped heads was larger than that for conventional structure heads. However, the field from the edges of the upper pole is not negligible for the T-shaped heads. As a result, neighboring bit patterns may be affected. To decrease the edge field, it is effective to make the throat height longer and recess the edges of the upper pole from the air bearing surface. Actual T-shaped heads were fabricated and their characterizations were investigated. The results agreed with simulations for longer throat height and for the recessed pole edge effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373362
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  • 8
    Electronic Resource
    Electronic Resource
    Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1158-1165 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of polar direction of GaN film on growth conditions has been investigated by changing either the group-V/group-III ratio (V/III ratio) in supplying the source gas or the deposition rate. GaN films were deposited on a nitrided sapphire by two-step metalorganic chemical vapor deposition. The surface morphology changed from flat hexagonal to pyramidal hexagonal facet with the increase of V/III ratio. However, the polar direction of GaN on an optimized buffer layer of 20 nm thickness was N-face (−c) polarity, independent of both the V/III ratio and the deposition rate. The polarity of the GaN epitaxtial layer can be determined by that of an interface (nitrided sapphire, annealed buffer layer or GaN substrate) at the deposition of GaN epitaxial layer. The higher V/III ratio enhanced the nucleation density, and reduced the size of hexagonal facets. The nuclei, forming the favorable hexagonal facets of wurtzite GaN, should grow laterally along the {101¯0} directions to cover a room among the facets until coalescence. After coalescence, −c GaN growth on a flat hexagonal facet results in a pyramidal hexagonal facet. The growth mode for −c GaN has been discussed with respect to surface structure and migration length of adsorbing precursors, in comparison with Ga-face (+c) GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373791
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of Dy substitution on the magnetocrystalline anisotropy of GdCo4B : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6283-6285 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction and magnetization measurements have been performed for powdered and field-oriented samples of Gd1−xDyxCo4B with x=0, 0.05, 0.1, and 0.2. It has been found that Gd1−xDyxCo4B with x=0.2 has a planar magnetic anisotropy in the temperature region below room temperature; however, the samples with x=0.05 and x=0.1 have an axial magnetic anisotropy at room temperature and transform to a tilted state in the low-temperature region. By analyzing magnetization curves measured in a pulsed field up to 140 kOe at T=4 K and also in a static field up to 12 kOe at 78 K for the field-oriented samples with x=0.05 and x=0.1, approximate values of magnetic anisotropy constants of a Dy ion in Gd1−xDyxCo4B, K1(Dy) and K2(Dy), have been determined to be −2.1×10−14 erg/Dy and 1.3×10−14 erg/Dy, respectively. By comparing these values with those of DyCo5.2, it is found that K2(Dy) in the CeCo4B-type structure is enhanced in one order by the crystallographic change from the CaCu5- to the CeCo4B-type structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355425
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  • 10
    Electronic Resource
    Electronic Resource
    Intermittent ultraviolet irradiation for silicon selective epitaxial growth (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 588-590 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a cyclic process of Si growth followed by ultraviolet (UV) irradiation which suppresses Si nucleation on the SiO2 surface. We grew Si using low pressure chemical vapor deposition with a Si2H6/H2 gas system without chlorine at 700 and 650 °C. Incubation period is determined using Auger electron spectroscopy as the time for which there is less than 0.015 coverage of Si on SiO2. We show that intermittent UV irradiation within the incubation period suppresses Si nucleation on the SiO2 surface. We believe the growth/UV-irradiation cyclic process is useful for preparing a thick Si selective epitaxial growth layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108864
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