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  • 2000-2004  (27)
  • 1985-1989  (10)
  • 1950-1954  (4)
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  • 1
    Digitale Medien
    Digitale Medien
    Dependence of the polar phonon limited mobility in the two-dimensional electron gas in GaInAs/InP heterostructures on hydrostatic pressure and carrier concentration (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4296-4298 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report measurements of the pressure dependence of the mobility of a two-dimensional electron gas in GaInAs/InP single and multiple quantum well systems and at a single heterojunction. The mobility dependence on both carrier density and effective mass is derived and shown to be the same in each system. Current theories of polar optic phonon scattering do not explain the mobility variation with carrier density but can describe the effective mass dependence.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339106
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  • 2
    Digitale Medien
    Digitale Medien
    Reassessment of ionized impurity scattering and compensation in GaAs and InP including correlation scattering (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2342-2359 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The pressure dependence of the electron Hall mobility has been measured in a wide variety of InP and GaAs samples. The results, analyzed by a number of techniques, indicate that, in general, very good agreement can be obtained between theory and experiment for pure material at temperatures where ionized impurity scattering is unimportant. When heavily doped samples of liquid-phase epitaxy (LPE) GaAs and vapor-phase epitaxy (VPE) InP were measured it was not possible to predict the experimental pressure dependence of the mobility using the Brooks–Herring theory of scattering from ionized impurities. The possibility of inaccuracies in analysis have been reduced by using an iterative solution of the Boltzmann equation, phase shift calculations, and also Moore's analysis [Phys. Rev. 160, 618 (1967)] for dressing and multi-ion corrections. However, these proved to be inadequate and we obtain the best agreement with experiment using the theory of Yanchev et al. [J. Phys. C 12, L765 (1979)] for scattering from a correlated distribution of impurities. The important effects of impurity correlation have been substantiated by studying samples of GaAs grown by molecular-beam epitaxy (MBE) and bulk GaAs subjected to neutron transmutation doping. The inability of impurities to correlate in such material is demonstrated by the close agreement between Brooks–Herring theory and experiment for these samples. When correlation scattering is taken into account, it becomes possible to explain the observed mobilities in heavily doped materials without having to always postulate autocompensation, as has been done by other authors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339827
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  • 3
    Digitale Medien
    Digitale Medien
    Laser chemical vapor deposition of patterned Fe on silica glass: Observation and origins of periodic ripple structures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2031-2034 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Laser chemical vapor deposition of patterned iron deposits on silica glass has been carried out using an Ar ion laser-driven dissociation of iron pentacarbonyl vapor. The structure of the deposited films has been studied using optical, electron, and scanning Auger microscopic techniques. Extensive iron silicate formation is observed at the iron-glass interface and 50-μm periodic ripples are formed in the delineated deposits. The origin of the periodic structure is discussed with reference to the available analytical data and observations from related laser processing studies.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336385
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  • 4
    Digitale Medien
    Digitale Medien
    Determination of alloy scattering potential in Ga1−xAlxAs alloys (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2640-2645 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Room-temperature Hall mobility as a function of pressure (0–8 kbar) has been measured for high-purity liquid-phase-epitaxy-grown Ga1−xAlxAs layers. GaAs-like band structure of low-composition alloys has also been converted to Si-like band structure at high pressures and the Hall mobility measured as a function of temperature (77(approximately-less-than)T(approximately-less-than)300 °K) with crystals locked under constant pressures. The data have been analyzed to identify and distinguish the presence of space charge and alloy scatterings both characterized by mobilities limited by T−1/2. The space charge scattering has been found to be absent in all the crystals studied except x=0.047. The alloy scattering potential for electrons in the Γ minimum has been shown to depend on the alloy composition with a maximum value of 1.56 eV at x=0.19. For electrons in the X minima, this potential has been found to be independent of composition with a value of only 0.4 eV.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.335895
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  • 5
    Digitale Medien
    Digitale Medien
    Pressure dependence of the nonradiative lifetime in GaAs/AlGaAs double-heterostructure lasers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3448-3450 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have measured the linear losses in a GaAs/AlGaAs double-heterostructure laser as a function of applied hydrostatic pressure. The nonradiative lifetime increases by a factor 2.5 from zero to 7.6 kbar, and if this is due to recombination via a deep state, then the rate-limiting capture cross section decreases with pressure, suggesting capture by multiphonon emission. We find that it is necessary to postulate the existence of other nonlinear losses at threshold to account for the increase in threshold current with pressure measured on the same structure. Carrier transfer to higher conduction-band minima in the active or cladding regions are suggested as possible mechanisms.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339313
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  • 6
    Digitale Medien
    Digitale Medien
    Determination of Small Amounts of Triethylene Glycol in Air (1950)
    s.l. : American Chemical Society
    Analytical chemistry 22 (1950), S. 661-663 
    Details
    ISSN: 1520-6882
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ac60041a011
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  • 7
    Digitale Medien
    Digitale Medien
    Band anticrossing in dilute InNxSb1−x (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 256-258 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Dilute nitrogen alloys of InSb exhibit extremely strong band gap bowing with nitrogen composition that has been associated with anticrossing between the localized resonant states of the nitrogen within the conduction band and the extended states of the conduction band itself. This also results in the conduction band dispersion having an enhanced nonparabolicity. We have measured the electron effective mass near the anticrossing by cyclotron resonance in InNxSb1−x alloys with absorption edge near 15 μm, using pulsed fields up to 150 T. The results directly demonstrate the band anticrossing and quantitatively confirm the increase of effective mass versus x predicted for InNxSb1−x by a tight binding calculation for low nitrogen concentration (x〈0.01). © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1493663
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  • 8
    Digitale Medien
    Digitale Medien
    Theoretical performance and structure optimization of 3.5–4.5 μm InGaSb/InGaAlSb multiple-quantum-well lasers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2640-2642 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a comprehensive theoretical investigation to optimize 3.5–4.5 μm InGaSb/InGaAlSb quantum-well (QW) lasers grown on ternary InGaSb substrates. We use an eight-band k⋅P Hamiltonian to calculate the Auger recombination and optical absorption coefficients in the active region, as well as the gain and threshold characteristics. The dominant Auger process involves hole excitation from the QW to unbound valence states. For structure optimization we varied the Ga content in the substrate and QW barrier layers. The optimized structure was obtained by maximizing the strain in the QWs, despite the Auger coefficient also increasing with strain. It is, therefore, demonstrated that the main aim for midinfrared laser optimization can be minimization of the threshold carrier density rather than reduction of the Auger coefficient. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1369146
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  • 9
    Digitale Medien
    Digitale Medien
    Auger recombination in long-wavelength infrared InNxSb1−x alloys (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1568-1570 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Dilute nitrogen alloys of InSb exhibit strong band gap bowing with increasing nitrogen composition, shifting the absorption edge to longer wavelengths. The conduction band dispersion also has an enhanced nonparabolicity, which suppresses Auger recombination. We have measured Auger lifetimes in alloys with 11 and 15 μm absorption edges using a time-resolved pump-probe technique. We find the lifetimes to be longer at room temperature than equivalent band gap Hg1−yCdyTe alloys at the same quasi-Fermi level separation. The results are explained using a modified k⋅p Hamiltonian which explicitly includes interactions between the conduction band and a higher lying nitrogen-related resonant band. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1355301
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  • 10
    Digitale Medien
    Digitale Medien
    Pasteurellosis in Atlantic salmon, Salmo salar L.: immunohistochemistry of the naturally-occurring disease (2003)
    Oxford, UK : Blackwell Science Ltd
    Journal of fish diseases 26 (2003), S. 0 
    Details
    ISSN: 1365-2761
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Biologie , Medizin
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1046/j.1365-2761.2003.00465.x
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