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Digitale Medien

Injection electroluminescence from CdTe p-n junctions prepared by LPE (1981)

Kitagawa, M. ; Saraie, J. ; Tanaka, T.

Springer

Applied physics 26 (1981), S. 151-156

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Details

ISSN: 1432-0630

Schlagwort(e): 78.60.Fi ; 73.40.Lq ; 81.10.Dn

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract CdTep-n junction diodes were prepared by LPE using CdCl2 as a solvent. Excess cadmium was added to the CdCl2-CdTe solution. Capacitance-voltage characteristics show that the diode structure is ofp-i-n type. Injection electroluminescence spectra reveal that radiative transitions occur mainly in thep-type region; relevant recombination centers are discussed in connection with those in a previous paper on the photoluminescence of CdTe:P crystals. Temperature dependences of the electroluminescence spectra were explained taking into account a change in sites where electrons radiatively recombine.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00614749

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