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  • 1
    Electronic Resource
    Electronic Resource
    Evaluation of five commercial serological tests for the detection of Helicobacter pylori infection in Chinese (2001)
    Oxford UK : Blackwell Science Ltd
    Alimentary pharmacology & therapeutics 15 (2001), S. 0 
    Details
    ISSN: 1365-2036
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Commercial serological tests for the detection of Helicobacter pylori infection must be locally validated. We evaluated the accuracy of five commercial tests in the Chinese population.〈section xml:id="abs1-2"〉〈title type="main"〉Methods:Serum samples were collected from patients referred for upper endoscopy. Antral biopsies were taken for histological examination and culture of H. pylori. The gold standard for diagnosing H. pylori infection was positive histological staining and/or positive H. pylori culture. The serum samples were tested for H. pylori antibodies using the following tests: (i) Cobas Core Anti-H. pylori EIA; (ii) GAP IgG; (iii) GAP IgM; (iv) H. pylori microwell EIA (Quidel); and (v) Premier H. pylori. The sensitivity, specificity and accuracy of each test was calculated according to the manufacturers’ instructions or according to a new cut-off value.〈section xml:id="abs1-3"〉〈title type="main"〉Results:A total of 158 patients were recruited amongst whom 114 (72%) were H. pylori-positive. Indeterminate results varied from 7% to 19%. The accuracy of the tests varied from 57% to 85%. By using new cut-off values, the accuracy was much improved, ranging from 73.4% to 86.7%.〈section xml:id="abs1-4"〉〈title type="main"〉Conclusions:By defining new cut-off values for the Chinese population, we were able to improve the performance of some of the serology tests. This illustrates the importance of local validation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2036.2001.00961.x
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  • 2
    Electronic Resource
    Electronic Resource
    Constant current linearization for determination of electron capture mechanisms (1983)
    s.l. : American Chemical Society
    Analytical chemistry 55 (1983), S. 1596-1599 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00260a034
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  • 3
    Electronic Resource
    Electronic Resource
    Zwitterion cycloadditions and free-radical polymerizations of p-(dimethylamino)styrene with tris- and tetrakis(carbomethoxy)ethylenes (1980)
    s.l. : American Chemical Society
    The @journal of organic chemistry 45 (1980), S. 835-838 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01293a015
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  • 4
    Electronic Resource
    Electronic Resource
    Study of copper silicide retardation effects on copper diffusion in silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3822-3824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A B-buried layer with a dose of 1×1014 atoms/cm2 was introduced into p-doped Si at a depth of 2.2 μm to enhance copper diffusion via its inherent gettering effect. Copper was then introduced into silicon either via a low-energy implantation followed by a thermal anneal, or through the thermal drive in of physical vapor deposited (PVD) copper film. Secondary ion mass spectrometry depth profiling of both annealed samples later indicated that while substantial amounts of copper was gettered by the B layer in the former sample, no copper was gettered by the B-buried layer in the latter sample. Further analysis with an x-ray diffraction technique showed that copper silicide, Cu3Si was formed in the latter sample. It is thus surmised that the formation of this silicide layer impeded the diffusion of copper towards the B-buried layer. This work investigates the cause of CuSix formation and the underlying reasons for the lower mobility of Cu in PVD Cu film samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343518
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  • 5
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7875-7878 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The exciton dynamics in InxGa1−xAs/GaAs quantum wells grown on (111)B and (100) GaAs substrates were studied by time-resolved photoluminescence (PL) under magnetic fields in a Faraday configuration. We have found that the piezoelectric fields in (111)B samples affect the transient behavior of the PL spectra. Compared with the reference (100) sample, we have found that the strong piezoelectric fields, as well as the magnetic fields, cause a slower spin–flip process in (111)B strained quantum wells. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376401
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  • 6
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy characterization of InAs self-assembled quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1172-1174 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336519
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  • 7
    Electronic Resource
    Electronic Resource
    Crystal morphology and phase purity of diamond crystallites during bias enhanced nucleation and initial growth stages (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3354-3360 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal morphologies and phase composition of diamond crystallites during bias enhanced nucleation and initial growth stages in microwave plasma chemical vapor deposition were investigated. Diamond nuclei were first formed in the central regions of substrates and then propagated to the sample edges. During the course of bias nucleation, excessive ion bombardment induced secondary nucleation sites on the already formed nuclei. The secondary nucleation deteriorated the overall alignment of the growing crystals. Hence, the elimination of secondary nucleation and homogeneous nucleation over substrates are fundamental requirements for the deposition of large-area uniformly oriented diamond films. Decreasing reactant pressure was found to be effective for improving plasma homogeneity and consequently nucleation uniformity. The results of bias enhanced nucleation within a pressure range from 8 to 20 Torr showed that the lower pressure of reactants enlarged the area of oriented diamond films. However, the optimum bias and duration of nucleation was found to be specific for each pressure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289071
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  • 8
    Electronic Resource
    Electronic Resource
    Nonuniform quantum well infrared photodetectors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 522-525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonuniform quantum well infrared photodetector (QWIP) structure is proposed. By changing the doping concentration and barrier width of each quantum well, the electric field distribution can be tailored. The nonuniform QWIPs show excellent performance compared with conventional uniform structures. The dark current is about an order of magnitude lower and the background limited temperature increases to 77 K. A detectivity of 2.0×1010 cm Hz1/2/W and a responsivity of 0.25 A/W at 8.2 μm have been obtained for these devices. A simple picture of electric field distribution within the structure is described to explain the results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371893
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  • 9
    Electronic Resource
    Electronic Resource
    Bulk-quantity Si nanosphere chains prepared from semi-infinite length Si nanowires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 727-731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk-quantity Si nanosphere chains have been fabricated. This is accomplished via the spheroidization of Si nanowires of semi-infinite lengths. The process has been extensively investigated by transmission electron microscopy. The nanosphere chains consisted of equally spaced Si crystalline nanospheres connected by Si-oxide bars. The transition from Si nanowires to Si nanosphere chains was determined by the annealing temperature, ambient pressure, initial Si nanowire diameters, and the oxide state of the outer layers of Si nanowires. The relationships between the geometry (size and spacing) of Si nanospheres, the initial state (diameter and oxide state) of Si nanowires, and the experimental conditions are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328786
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  • 10
    Electronic Resource
    Electronic Resource
    Hole Schottky barrier height enhancement and its application to metal–semiconductor–metal photodetectors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5666-5669 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole Schottky barrier heights on GaAs have been studied experimentally by using a conventional metal–semiconductor–metal photodetector (MSMPD) structure. The Schottky barrier height for holes was obtained directly by the hole-current dominated dark current measurement of the MSMPD. With a thin, highly doped surface layer, control of the Schottky barrier heights for holes from 0.48 to 0.79 eV was obtained. By using these engineered Schottky contacts in the MSMPDs, over three orders of magnitude reduction in the dark currents of the MSMPDs was achieved. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415060
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