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  • 2000-2004  (4)
  • 1980-1984  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 295-297 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report on the kinetics of growth of aluminum gallium nitride films by rf plasma-assisted molecular-beam epitaxy on (0001) sapphire substrates at the temperature range of 750–800 °C. The determination of the incorporation probabilities of aluminum and gallium atoms was arrived at by measurements of the growth rate and composition of the films. We find that, in both the nitrogen-rich and group-III-rich growth regimes, the incorporation probability of aluminum is unity for the entire investigated temperature range. On the other hand, the incorporation probability of gallium is constant and equals 0.75 at a substrate temperature of 750 °C only in the nitrogen-rich growth regime. The temperature dependence of the incorporation probability in this regime has an activation energy of 2.88 eV which is consistent with gallium desorption from the surface. In the group-III-rich growth regime, the incorporation probability of gallium decreases monotonically with group-III fluxes due to the competition with aluminum for the available active nitrogen. In this regime, the GaN phase growth rate is determined by the capture probability of the available active nitrogen from the gallium surface adlayer. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492853
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  • 2
    Electronic Resource
    Electronic Resource
    High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2818-2820 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A number of distributed Bragg reflectors (DBRs) based on AlN/GaN quarterwave layers have been grown on (0001) sapphire by electron cyclotron resonance plasma-assisted molecular-beam epitaxy. The number of periods for the DBRs ranges from 20.5 to 25.5 and the thickness of the quarterwave layers were chosen such that the peak reflectance occurs from the near ultraviolet to green wavelength regions. Peak reflectance values between 97% and 99% were obtained for these DBRs. The best sample has a peak reflectance up to 99% centered at 467 nm with a bandwidth of 45 nm. The experimental reflectance data for this sample were compared with simulations using the transmission matrix method and show excellent agreement with respect to peak reflectance, bandwidth of high reflectance, and the locations of the sidelobes. The thickness of the quarterwave layers and uniform periodicity of the bilayers were confirmed by cross-section transmission electron microscopy. A network of cracks was observed in some of the samples and this is attributed to tensile stress in the AlN layers. We have grown asymmetric DBRs with thicker AlN layers and thinner GaN layers to reduce the tensile strength in the AlN layers. Such an approach resulted in samples that have significantly less cracks or even crack-free. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126483
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of vertical transport in n-GaN films grown by molecular beam epitaxy using Schottky barrier diodes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1045-1047 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, the lateral and vertical transport in lightly doped n−-GaN films, grown by plasma assisted molecular beam epitaxy, were investigated in order to explore the role of electron scattering by charged dislocations. Lateral transport constants were determined by Hall effect measurements on n−-GaN films. The doping concentration and mobility of the investigated films was 1–2×1017 cm−3 and 150–200 cm2/V s, respectively. Vertical transport was studied by etching mesa structures and forming Schottky barrier diodes. The diodes exhibit near ideal forward current–voltage characteristics with reverse saturation current densities in the 1–10×10−9 A cm−2 range. The doping concentrations as well as the barrier height of the diodes were determined from capacitance–voltage measurements to be 8–9×1016 cm−3 and 0.95–1.0 V, respectively. The analysis of the reverse saturation current, using the diffusion theory, leads to vertical mobility values of 950 cm2/V s. The significant increase in mobility for vertical transport is attributed to reduction in scattering by charged dislocations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125933
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  • 4
    Electronic Resource
    Electronic Resource
    Chemical ordering in AlGaN alloys grown by molecular beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 463-465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum gallium nitride alloys were grown by molecular beam epitaxy and their film composition, structure, and microstructure were investigated by Rutherford backscattering spectroscopy, atomic force microscopy, x-ray diffraction, and transmission electron microscopy. It was found that the ratio of group-III to group-V fluxes influences the relative incorporation of gallium and aluminum in the films. The transmission electron microscopy and x-ray diffraction studies revealed the existence of three types of spontaneously formed superlattice structures with periodicities of 2, 7, and 12 ML. While the 2 ML ordering is preferred under group-V rich conditions of growth, the 7 and 12 ML orderings were observed under group-III rich conditions of growth. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1341222
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  • 5
    Electronic Resource
    Electronic Resource
    Determination of argon in sputtered silicon films by energy-dispersive x-ray fluorescence spectrometry (1981)
    s.l. : American Chemical Society
    Analytical chemistry 53 (1981), S. 1792-1795 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00235a017
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    Paper (German National Licenses)
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