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  • 2000-2004  (2)
  • 1970-1974  (1)
  • 1
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Fg; 77.80.-e; 68.55. -a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Preferentially (105)-oriented SrxBi2+yTa2O9 (SBT) thin films on SiN/SiO2/p-Si(100) prepared by the pulsed laser deposition (PLD) method at a temperature as low as 400 °C, which is the lowest process temperature for growing SBT ferroelectric thin films on a silicon nitride film. Excess Bi promotes crystallization of the SBT film. A metal–ferroelectric–nitride–oxide–semiconductor (MFNOS) structure, which is very important in ferroelectric gate memory FET, has been fabricated by depositing the SBT film on silicon nitride–oxide–silicon. The MFNOS structures show capacitance–voltage (C–V) hysteresis corresponding to ferroelectric hysteresis. A memory window of the C–V hysteresis is improved, to be as high as 3.5 V in the SBT(400 nm)/SiNx(7 nm)/SiO2(18 nm)/Si compared with the window of 2.7 V in the SBT(400 nm)/SiO2(27 nm)/Si (MFOS), where the thicknesses of their insulator layers are nearly the same. Little degradation is induced in the C–V characteristics of the SiNx/SiO2/p-Si structure when depositing the SBT film by PLD at low temperature. It is also found that the SiNx layer acts as a diffusion barrier against component atoms in the SBT film during its deposition. Finally, the MFNOS structure prepared at the low temperature is very promising for a next-generation ferroelectric gate memory FET.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: PACS: 77.80; 68.55; 81.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Sr0.51Ba0.48La0.01Nb2O6 (SBLN) thin films were prepared on platinized silicon substrates by pulsed laser deposition (PLD) combined with annealing technique. The preferred orientation, surface morphology, composition, and interfacial properties of the SBLN thin films were characterized by X-ray diffraction, atomic force microscopy, transmission electron microscopy, X-ray energy dispersive spectroscopy, and automatic spreading resistance measurement. The ferroelectric properties were confirmed by P – E hysteresis loops. The frequency variation of the dielectric constant was measured as well.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 14 (1974), S. 38-42 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A highly sensitive thickness sensor has been developed which may be used as a continuously recording extensometer for rubbery materials. The application of the sensor for measuring volume changes in dewetting filled rubbers is also discussed. Further possible applications include the determination of Poisson's ratio on plastics.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
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