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  • 2000-2004  (106)
  • 1965-1969  (79)
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  • 1
    Electronic Resource
    Electronic Resource
    Studies on the Biosynthesis of Magnamycin* (1967)
    s.l. : American Chemical Society
    Biochemistry 6 (1967), S. 3111-3118 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00862a019
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Nature of the products of .gamma.-radiolysis of aerated aqueous solutions of benzene (1969)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 73 (1969), S. 2071-2073 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100726a076
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  • 3
    Electronic Resource
    Electronic Resource
    Full-band-structure calculation of Shockley–Read–Hall recombination rates in InAs (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 848-851 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a calculational procedure to obtain the rate of electron–hole recombination, mediated by the Shockley–Read–Hall (SRH) mechanism. Our method uses a combination of first-principles calculations and accurate empirical band structures. First, we use ab initio calculations to identify the point defects, their densities and energy levels in the gap. Then we parametrize the tight-binding interaction between defect and the host atoms in a Green's function approach to obtain the defect levels as identified by the first-principles calculations. Finally, the resulting tight-binding Hamiltonian is used to obtain the dipole matrix element between the conduction and valence band states, mediated through the defect levels in the gap, in second-order perturbation theory. The states are integrated over the entire Brillioun zone, subject to energy and momentum conservation, to obtain the limiting lifetimes of the carriers. This method is applied to study the minority carrier lifetimes in n-doped InAs. The calculated effective lifetimes that include Auger and SRH recombinations as functions of temperature agree reasonably well with experiment. Our calculation of lifetimes in 3.5×1016 and 2.0×1016 cm−3 n-doped InAs indicate that SRH is dominant at low temperatures and that the lifetimes vary between 10−8 and 10−7 s. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1381051
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  • 4
    Electronic Resource
    Electronic Resource
    Electro-optical measurements of picosecond bunch length of a 45 MeV electron beam (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4921-4926 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the temporal duration of 45 MeV picosecond electron beam bunches using a noninvasive electro-optical (EO) technique. The amplitude of the EO modulation was found to increase linearly with electron beam charge and decrease inversely with distance from the electron beam. The rise time of the temporal signal was limited by our detection system to ∼70 ps. The EO signal due to ionization caused by the electrons traversing the EO crystal was also observed. It has a distinctively long decay time constant and signal polarity opposite to that due to the field induced by the electron beam. The electro-optical technique may be ideal for the measurement of bunch length of femtosecond, relativistic, high energy, charged, particle beams. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358322
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  • 5
    Electronic Resource
    Electronic Resource
    Poloidal flows and enhanced reverse shear bifurcation in tokamaks (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 1437-1442 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of poloidal flow shear on transition to enhanced reverse shear (ERS) mode in tokamaks is studied. A model is examined where the flow-fluctuation equilibrium evolves in time as a function of pressure gradients. Under some conditions the transition to the ERS phase occurs via as s-fold catastrophe and is accompanied by a spike in poloidal flow generation where poloidal flow shear is reversed. The nature of the transition is found to depend critically on the ratio of factors controlling the damping and generation of poloidal flow shear. The turbulence level shows a periodic bursting behavior which is suppressed in the ERS phase. The relevance of these results to recent observations from the Tokamak Fusion Test Reactor [R. E. Bell et al., Phys. Rev. Lett. 81, 1429 (1998)] is briefly discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873962
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  • 6
    Electronic Resource
    Electronic Resource
    High β compact toroidal equilibria (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 4483-4488 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship of the recently proposed tokamak with spheromak shell (STSS) with other compact equilibria in the low aspect ratio A regime, e.g., spherical tokamaks, field reversed configurations, is studied. It is shown that these equilibria are complementary to equilibria with a magnetic hole studied earlier by Cowley et al. [S. C. Cowley, P. K. Kaw, R. S. Kelly, and R. M. Kulsrud, Phys. Fluids B 3, 2066 (1991)] in the large A regime. The former is perfectly paramagnetic while the latter is perfectly diamagnetic. Relevance of these results to the study of compact equilibria conducted recently on Tokyo University Spherical Torus(TS)-3 and TS-4 [M. Inomoto, Y. Ueda, Y. Ono, T. Murakami, M. Tsurda, M. Yamada, and M. Katsurai, Proceedings of the 17th Conference on Fusion Energy, Yokohama, 1998 (International Atomic Energy Agency, Vienna, 1998), Vol. 3, p. 927] is briefly discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403696
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  • 7
    Electronic Resource
    Electronic Resource
    A simple continuum model for boron clustering based on atomistic calculations (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3650-3655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron exhibits anomalous diffusion during the initial phases of ion implant annealing. Boron transient enhanced diffusion is characterized by enhanced tail diffusion coupled with an electrically inactive immobile peak. The immobile peak is due to clustering of boron in the presence of excess interstitials which also enhance boron diffusion in the tail region. We present a simple model for the formation of immobile boron interstitial clusters and associated point defect interactions derived based on atomistic calculations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352576
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  • 8
    Electronic Resource
    Electronic Resource
    Modeling of vacancy cluster formation in ion implanted silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4758-4765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation of silicon introduces excess point defects that quickly recombine during annealing leaving net interstitial and vacancy populations. For higher energy implants, the separation between interstitials and vacancies is larger, leading to a vacancy rich region towards the surface and an interstitial rich region deeper in the bulk. The high supersaturation of vacancies in the near surface region can lead to their aggregation into vacancy clusters or voids. In this work we have developed a continuum model for vacancy clusters using discrete cluster sizes. Results from atomistic calculations [Bongiorno et al., Europhys. Lett. 43, 695 (1998)] are used for the energetics of the cluster growth/dissolution. The model is compared to data from Venezia et al. [Appl. Phys. Lett. 73, 2980 (1998)] for Au indiffusion subsequent to Si high energy implants. We found good agreement with experimental data using this model without any tuning of the parameters. However, this model is too complex and computationally expensive to be effectively incorporated into continuum process simulation tools. Hence we reduced this system of discrete rate equations into a two-moment model by carefully considering the behavior of the full model under a range of conditions. The parameters of the moment-based model follows from the full model, which in turn is based on atomistic calculations. The resulting simple and computationally efficient model is found to accurately reproduce the Au labeling experiments. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352680
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  • 9
    Electronic Resource
    Electronic Resource
    Below band-gap optical absorption in semiconductor alloys (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 260-264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used accurate Hamiltonians and resulting wave functions to calculate the two-photon absorption coefficient and the free-carrier absorption coefficient in InAs and a HgCdTe alloy with the same band gap. Detailed results are obtained for the dependencies of the absorption on photon energy and incident intensity. Optical matrix elements are calculated from the wave number dependent wave functions. We have further solved the appropriate steady-state differential equation, with the calculated values of absorption coefficients, for depth dependence of the intensity in the material. We find that the nonlinear absorption in a HgCdTe alloy is about 100% larger than that in InAs of the same band gap and window thickness. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373650
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  • 10
    Electronic Resource
    Electronic Resource
    Complementation of Physiological and Behavioral Defects by a Slowpoke Ca2+ -Activated K+ Channel Transgene (2000)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 75 (2000), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The Drosophila slowpoke gene encodes a large conductance calcium-activated potassium channel used in neurons, muscle, and some epithelial cells. Tissue-specific transcriptional promoters and alternative mRNA splicing generate a large array of transcripts. These distinct transcripts are thought to tailor the properties of the channel to the requirements of the cell. Presumably, a single splice variant cannot satisfy the specific needs of all cell types. To test this, we examined whether a single slowpoke splice variant was capable of complementing all slowpoke behavioral phenotypes. Null mutations in slowpoke cause animals to be semiflightless and to manifest an inducible "sticky-feet" phenotype. The well-characterized slowpoke transcriptional control region was used to direct the expression of a single slowpoke splice variant (cDNA H13) in transgenic flies. The endogenous gene in these flies had been inactivated by the slo4 mutation. Action-potential recordings and voltage-clamp recordings demonstrated the production of functional channels from the transgene. The transgene completely complemented the flight defect, but not the sticky-feet phenotype. We conclude that distinct slowpoke channel isoforms, produced by alternative splicing, are not interchangeable and are required for proper function of different cell types.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.2000.751310.x
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