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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 67 (1945), S. 767-769 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 20 (1948), S. 766-771 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2824-2825 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A p-i-n avalanche photodiode (APD) using GaNAs grown on GaAs has been demonstrated. Characterization of the excess noise in the material was used to determine that the ratio of ionization coefficients (k=β/α) is k=0.4. The quantum efficiency was above 25% at 0.94 μm for 0.75% nitrogen incorporation. The APDs exhibited low dark currents (〈60 nA/mm2 at 90% of breakdown) and a gain-bandwidth product of 42 GHz. GaNAs therefore shows promise for extending the operation of GaAs-based APDs to longer wavelengths. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1945-1947 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that the Pb1 correlation energy is significantly smaller than that of the Pb1 defect, and (3) that the Pb1 levels are skewed toward the lower part of the silicon band gap. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1543-1544 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A resonant-cavity avalanche photodiode using a GaNAs absorption region grown on GaAs has been demonstrated. The peak quantum efficiency was 59% at 1.064 μm with a full width at half maximum of 11 nm. The absorption coefficient was determined to be α=9×103/cm at this wavelength. The devices exhibited gain up to 100 at a low breakdown voltage of 13 V. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1900-1902 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth, fabrication, and characterization of AlxGa1−xN (0≤x≤0.60) heteroepitaxial back-illuminated solar-blind p-i-n photodiodes on (0001) sapphire substrates. The group III-nitride heteroepitaxial layers are grown by low-pressure metalorganic chemical vapor deposition on double polished sapphire substrates using various growth conditions. The back-illuminated devices exhibit very low dark current densities. Furthermore, they exhibit external quantum efficiencies up to 35% at the peak of the photoresponse (λ∼280 nm). Improvements were made to the growth technique in order to achieve crack-free Al0.4Ga0.6N active regions on a thick Al0.6Ga0.4N window layer and to obtain activated p-type Al0.4Ga0.6N layers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2810-2812 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the device performance of selective-area regrown Al0.30Ga0.70N p–i–n photodiodes. Tensile strain, induced by the lattice mismatch between AlxGa1−xN and GaN, leads to cracking above the critical thickness in layers with high aluminum concentration. Selective-area regrown devices with ≤70 μm diameters were fabricated without signs of cracking. These devices show low dark current densities with flat photoresponse and a forward turn-on current of ∼25 A/cm2 at 7 V. A quantum efficiency greater than 20% was achieved at zero bias with a peak wavelength of λ=315 nm. A differential resistance of R0=3.46×1014 Ω and a detectivity of D*=4.85×1013 cm Hz1/2 W−1 was demonstrated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 71 (1949), S. 3556-3556 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 41 (1949), S. 893-897 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Global change biology 9 (2003), S. 0 
    ISSN: 1365-2486
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Energy, Environment Protection, Nuclear Power Engineering , Geography
    Notes: Forest development following stand-replacing disturbance influences a variety of ecosystem processes including carbon exchange with the atmosphere. On a series of ponderosa pine (Pinius ponderosa var. Laws.) stands ranging from 9 to〉 300 years in central Oregon, USA, we used biological measurements to estimate carbon storage in vegetation and soil pools, net primary productivity (NPP) and net ecosystem productivity (NEP) to examine variation with stand age. Measurements were made on plots representing four age classes with three replications: initiation (I, 9–23 years), young (Y, 56–89 years), mature (M, 95–106 years), and old (O, 190–316 years) stands typical of the forest type in the region. Net ecosystem productivity was lowest in the I stands (−124 g C m−2 yr−1), moderate in Y stands (118 g C m−2 yr−1), highest in M stands (170 g C m−2 yr−1), and low in the O stands (35 g C m−2 yr−1). Net primary productivity followed similar trends, but did not decline as much in the O stands. The ratio of fine root to foliage carbon was highest in the I stands, which is likely necessary for establishment in the semiarid environment, where forests are subject to drought during the growing season (300–800 mm precipitation per year). Carbon storage in live mass was the highest in the O stands (mean 17.6 kg C m−2). Total ecosystem carbon storage and the fraction of ecosystem carbon in aboveground wood mass increased rapidly until 150–200 years, and did not decline in older stands. Forest inventory data on 950 ponderosa pine plots in Oregon show that the greatest proportion of plots exist in stands ∼ 100 years old, indicating that a majority of stands are approaching maximum carbon storage and net carbon uptake. Our data suggests that NEP averages ∼ 70 g C m−2 year−1 for ponderosa pine forests in Oregon. About 85% of the total carbon storage in biomass on the survey plots exists in stands greater than 100 years, which has implications for managing forests for carbon sequestration. To investigate variation in carbon storage and fluxes with disturbance, simulation with process models requires a dynamic parameterization for biomass allocation that depends on stand age, and should include a representation of competition between multiple plant functional types for space, water, and nutrients.
    Type of Medium: Electronic Resource
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