Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 8201-8203
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High dose nitrogen implantations have been performed at an energy of 30 keV. After high temperature annealing, 1200 °C, a buried layer composed mostly of silicon nitride is formed leaving an overlayer with a high fraction of crystalline silicon. The lattice constant of the overlayer and the region below the SiNx are reduced in 0.13% and 0.089%, respectively. The substitutional N seems to be responsible for this reduction. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.373520
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