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  • 1
    Book
    Book
    Philadelphia :SIAM,
    Title: Computational methods for inverse problems /; 23
    Author: Vogel, Curtis R.
    Publisher: Philadelphia :SIAM,
    Year of publication: 2002
    Pages: xvi, 183 S. : , Ill., graph. Darst.
    Series Statement: Frontiers in applied mathematics 23
    ISBN: 978-0-89871-550-7 , 0-89871-550-4 , 0-89871-507-5
    Type of Medium: Book
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1502-1509 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new technique was developed to simultaneously measure the velocity and surfactant surface concentration at an air/water interface via a common laser probe. The surfactant concentration is measured using the nonlinear optical technique of reflected second-harmonic generation (SHG), utilizing an Nd:YAG laser. The transmitted portion of the same laser beam provides illumination for velocity measurements at the interface using the technique of boundary-fitted digital particle image velocimetry (DPIV). The combined SHG and DPIV system was utilized to scan along the free surface of a uniform water flow with a surface barrier trapping hemicyanine, an insoluble monolayer. Measurements were made downstream of the Reynolds ridge, which marks the contamination front and the leading edge of a free-surface boundary layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6585-6587 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed a detailed study of the magnetization reversal in polycrystalline exchange-coupled NiO/Co bilayers over 10 decades of field sweep rate dH/dt for different NiO and Co thicknesses. For all sweep rates and thicknesses, the symmetry of the hysteresis loops shows that an identical pinning strength has to be overcome in both directions of the reversal. At low dH/dt the reversal is governed by domain wall displacement while domain nucleation is dominant at higher ones. The dH/dt at which the transition between the two regimes takes place depends on the relative thickness of the NiO and Co layers. It increases (decreases) when the Co (NiO) thickness is increased. Experimentally, it was found that the energy barrier varies linearly with the square root of the area corresponding to the activation (Barkhausen) volume which is consistent with a random walk model of the coupling between antiferromagnetic and ferromagnetic layers. The results can be explained in terms of a thermally activated switching of the NiO magnetization dragged by the Co reversal. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2338-2346 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole-induced bulk and interface defect generation and breakdown in ultrathin silicon dioxide (2.0 and 3.0 nm) are studied using substrate hot-hole injection. The results show that although these substrate hot holes are effective in creating electrically active damage in the dielectrics, these defects are very ineffective in causing breakdown as compared to those defects created by constant voltage tunneling stress. Identical to hole trapping in thicker oxides, substrate hot-hole defect generation was independent of electric field, decreased with decreasing thickness, and increased with decreasing temperature. The defect generation and breakdown of ultrathin oxides by substrate hot-hole stress is significantly different from that observed for constant voltage tunneling stress. The results suggest that the degradation and breakdown of ultrathin silicon dioxide cannot be explained by the trapping of hot holes alone.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 10883-10891 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Applying random walk simulations we analyze results of one- (1D) and two-dimensional (2D) 2H nuclear magnetic resonance (NMR) experiments carried out to study the slow β process of toluene-d5 below the glass transition temperature Tg. In this way, we reveal amplitude and mechanism of rotational jumps involved in the secondary relaxation of a rigid molecule. It is shown that essentially all toluene molecules take part in the β-process. In the glass, nearly independent of temperature, the attributed reorientation is restricted to small solid angles of typically 4°–5° for the majority of particles. Only 10%–20% of the molecules exhibit amplitudes χ〉10°. Concerning the mechanism of this highly restricted motion we demonstrate that the reorientation takes place step-by-step via several elementary rotational jumps one after the other. Assuming thermally activated jumps within energy landscapes which are, first, attributed to a small section of the unit sphere for each respective molecule and, second, chosen in accordance with the distribution of energy barriers g(Eβ) found in dielectric spectroscopy we succeed in reproducing the results of 1D and 2D 2H NMR experiments on toluene below Tg. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 117 (2002), S. 2151-2160 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Transport properties of pure carbon dioxide have been calculated from the intermolecular potential using the classical trajectory approach. Results are reported for shear viscosity, viscomagnetic coefficients, and self-diffusion in the dilute-gas limit and in the temperature range of 200–1500 K for the three recently proposed carbon dioxide potential energy hypersurfaces. Agreement with the measurements is, in general, within the experimental error. The calculations indicate that the corrections in the second-order approximation and those due to the angular-momentum polarization for the viscosity are small, 〈1% in the temperature range considered. The very good agreement of the calculated values for the Bukowski et al. potential energy hypersurface (1999) with the experimental viscosity data is consistent with the rigid-rotor assumption made in the calculations being reasonable for the three properties considered. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 5802-5815 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We study the Johari–Goldstein β process of organic glass formers by one- (1D) and two-dimensional (2D) 2H nuclear magnetic resonance (NMR). In particular, we compare systems with pronounced secondary relaxation in dielectric spectroscopy, namely toluene-d5 and polybutadiene-d6 (PB), with compounds which do not exhibit a distinct β peak, i.e., glycerol-d5 and polystyrene-d3 (PS). Choosing large interpulse delays in the applied echo pulse sequences we increase the sensitivity on small angle rotational jumps. This way, we are able to probe clearly the β process of toluene and PB in the line shape of 1D 2H NMR spectra and in the orientational correlation functions of 2D 2H NMR in time domain which is not possible when using the conventional techniques. Below the glass transition temperature Tg, the secondary relaxation of both glass formers is caused by a highly restricted reorientation of essentially all molecules. Comparing our results with simulations we estimate that the reorientation of most toluene molecules and PB monomeric units is characterized by an amplitude χ〈10°. This amplitude is approximately unchanged below Tg, but strongly increases above the glass transition. Closer investigating the 1D 2H NMR line shape for large interpulse delays we moreover demonstrate that the reorientation involved in the β process takes place step-by-step via many elementary rotational jumps. On the other hand, for glycerol and PS, hardly any effects are observed in 1D and 2D 2H NMR experiments below Tg when applying comparable experimental parameters. We conclude that reorientations with an amplitude χ〉1° do not occur on a time scale of μs−ms for the majority of molecules in glassy glycerol and PS. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3343-3345 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of injected electrons with defects created by hot holes in 2.0-nm-thick silicon dioxide is studied using substrate hot hole injection and concomitant electron tunneling. The ratio of injected hot holes to electrons is varied from approximately 10−3 to 100 by changing the forward biased substrate hot hole injector voltage. Increased bulk and interfacial degradation caused by the interaction of concomitantly injected electrons with defects created by hole injection is not observed for the experimental conditions studied. The ability of defects to produce catastrophic breakdown is also not affected. The results suggest that the interaction of tunneling electrons with defects created by hot holes is not a viable mechanism for explaining the catastrophic breakdown of the oxide layer in field-effect transistors. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1282-1284 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO2 films subjected to 60Co gamma irradiation and heavy ions of 823 MeV 129Xe (linear energy transfer=59 MeV-cm2/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence.© 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2592-2594 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The operation of a cryogenic scanning force microscope is demonstrated with a sensitivity of about 50 fN/Hz at 5 kHz modulation. This microscope is used as an electrometer in noncontact mode in order to map the local electrostatic forces and capacitance of several nanostructures at 4.2 K. Capacitance imaging of nanostructured surfaces with subatto-Farad resolution is demonstrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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