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  • 2000-2004  (15)
Materialart
Erscheinungszeitraum
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8793-8795 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Room-temperature electroluminescence corresponding to Si band gap energy from metal–oxide–semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal–oxide–semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron–hole radiative recombination to occur relatively easily. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 637-639 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Metal–oxide–silicon tunneling diodes with SiO2/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (〈3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si–D bond bending mode and the transverse optical phonon of bulk silicon. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2264-2266 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The temporal response of the electroluminescence at the Si band gap energy from a metal–oxide–silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley–Read–Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1111-1113 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The temperature performance of metal–oxide–silicon tunneling light-emitting diodes was studied. An electron–hole-plasma model can be used to fit all the emission spectra from room temperature to 98 K. At constant voltage bias in the accumulation region, the normalized integral emission intensity slightly increases at low temperature with activation energy as low as 12 meV. From room temperature down to 98 K, the extracted band gaps are ∼80 meV lower than the value of Varshni equation, and the linewidth drops from 65 to 30 meV. The transverse optical and longitudinal optical phonons are involved in the light-emission process due to the reduction of extracted band gaps and the resemblance between electroluminescence and photoluminescence spectra at similar temperature. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1397-1399 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The reliability of electroluminescence from metal–oxide–silicon (MOS) tunneling diodes was improved by the incorporation of deuterium. The deuterium was incorporated by the deuterium prebake and the postoxide deuterium annealing. At constant current stress of 100 mA, a deuterium-treated n-channel MOS tunneling light-emitting diode shows that the integrated light emission intensity increases slightly about 6% after 10 000 s operation, while the hydrogen-treated device shows a 30% decrease of the integrated light emission intensity. The hydrogen release by the electrons tunneling from the gate electrode to Si and the formation of interface defects are responsible for the degradation of light output in the hydrogen-treated samples. An annealing model is also given to explain the slight increase of light output in the deuterium-treated samples. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1516-1518 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal–oxide–silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrons and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 7
    ISSN: 1365-2826
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Noradrenergic inputs to the hypothalamic paraventricular nucleus (PVN) play important roles in the regulation of neuroendocrine and autonomic functions. Previous reports show that noradrenaline increases the frequency of spontaneous inhibitory postsynaptic currents (sIPSCs) in a subpopulation of type II neurones, acting via α1-adrenoceptors (ARs), but reduces this frequency in most type I and another subpopulation of type II neurones, via α2-ARs on presynaptic GABA neurones. Here, we identified the subtypes of α-ARs mediating noradrenaline-induced increases and decreases in the sIPSC frequency of PVN neurones, by using slice patch recordings from PVN neurones. In both type I and II neurones, the noradrenaline-induced decrease in sIPSC frequency was completely blocked by BRL44408 (α2A-AR antagonist) at 1–3 µM, which is approximately 1/100 of its equilibrium dissociation constant (pA2 = 8.0), but not by prazosin (20–100 µM, α2B/C-AR antagonist; pA2 = 7.5). The effect of noradrenaline was mimicked by guanfacine (α2A-AR agonist) with an EC50 of 0.1 µM. In type II neurones, the noradrenaline-induced increase in sIPSC frequency was not blocked by any of the following antagonists: RS17053 (10 µM, α1A-AR antagonist), BMY7378 (2 µM, α1D-AR antagonist), prazosin (0.1 µM, α1-AR antagonist; pA2 = 10.5), or chloroethylclonidine (10 µM, α1B/D-AR antagonist). However, the effect of noradrenaline was blocked by higher concentrations of prazosin (1 µM) or RS17053 (100 µM), suggesting the involvement of α1L-subtype, a low affinity form of α1A-ARs. Collectively, our results indicate that the α2A-, or α1L-ARs on the GABA neurones mediate the noradrenaline-induced decreases, or increases in the frequencies of the sIPSCs of PVN neurones, respectively.
    Materialart: Digitale Medien
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  • 8
    ISSN: 1365-2826
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 9
    ISSN: 1365-2222
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Background Recent investigations have demonstrated that the citrus red mite (Panonychus citri, CRM) is the most important allergen in citrus fruit farmers with asthma and rhinitis and a common sensitizing allergen in children living near citrus orchards.Objective To evaluate the sensitization rate to CRM and the association between sensitization to CRM and atopic diseases, such as athma, allergic rhinitis and atopic dermatitis, in adolescents living in rural areas with citrus orchards.Methods A total of 2005 adolescents (aged from 16 to 18 years) living in rural areas with citrus orchards were enrolled. Subjects were evaluated by a questionnaire and a skin prick test with 11 common aeroallergens including CRM.Results The prevalences of current wheeze, rhinoconjuntivitis, and eczema on the questionnaire were 13.0%, 13.6%, and 8.8%, respectively. On skin prick tests, the most common sensitizing allergen was CRM [20.6%], followed by Dermatophagoides pteronyssinus (18.5%), D. farinae (14.6%) and cockroach (9.8%). The prevalence of current eczema was significantly associated with the sensitization to CRM (OR = 1.9, 95% CI 1.3–2.9), although the prevalence of current wheeze and rhinoconjunctivitis was not associated with it. Among adolescents living near citrus orchards, however, the prevalences of current wheeze and rhinoconjuncitivitis were significantly higher in those with sensitization to only CRM than in those without sensitization to any allergens (20.3% vs. 14.1% and 20.3% vs. 15.0%, P 〈 0.05, respectively).Conclusion CRM is the most common sensitizing allergen in adolescents living in rural areas with citrus orchards, and sensitization to CRM was significantly associated with the prevalence of atopic dermatitis.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 10
    ISSN: 1365-2222
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Specific IgE responses to allergens provide useful models for evaluating the genetic factors that control human immune responses. A recent survey demonstrated that the citrus red mite (Panonychus citri, CRM) is the most important allergen in the development of asthma in citrus farmers.〈section xml:id="abs1-2"〉〈title type="main"〉ObjectiveThe aim of this study was to evaluate whether susceptibility or resistance to CRM-induced asthma was associated with HLA-DRB1 gene.〈section xml:id="abs1-3"〉〈title type="main"〉MethodsDNAs were extracted from two groups of unrelated Korean adults living around citrus farms: (1) Ninety-one adults with CRM-sensitive asthma; and (2) 98 exposed, healthy nonatopic controls. Genotypes of HLA-DRB1 alleles were carried out using PCR-based methods.〈section xml:id="abs1-4"〉〈title type="main"〉ResultsAllelic frequency of HLA-DRB1*07 was higher in the CRM-sensitive asthmatics compared to the controls (17.6% vs 4.1%, Pc = 0.01). Conversely, the frequency of DRB1*04 was lower in the CRM-sensitive asthmatics compared to the controls (19.8% vs 40.8%, Pc = 0.01). No significant difference was found in the distributions of the other HLA-DRB1 gene-encoded antigens between the two groups.〈section xml:id="abs1-5"〉〈title type="main"〉ConclusionHLA-DRB1 genes may be involved in the development of CRM-induced asthma. In addition, HLA-DR7 may increase, and DR4 decrease, the risk of developing the asthma in CRM-exposed adults.
    Materialart: Digitale Medien
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