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  • 2000-2004  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2912-2914 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric constants, k, of Zr(Hf) silicate alloy gate dielectrics obtained from analysis of capacitance–voltage curves of metal–oxide–semiconductor capacitors with 3–6 at. % Zr(Hf) are significantly larger than estimates of k based on linear extrapolations between SiO2 and compound silicates, Zr(Hf)SiO4. Analysis of infrared spectra of Zr silicate alloys with 3–16 at. % Zr indicates increases in the coordination of Zr to O atoms from 4 to approximately 8 with increasing Zr content. The major contributions to enhancements in k in these low Zr(Hf) content alloys are explained by a transverse infrared effective charge that scales inversely with increasing Zr–O bond coordination. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320860
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic structure of noncrystalline transition metal silicate and aluminate alloys (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1775-1777 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A localized molecular orbital description (LMO) for the electronic states of transition metal (TM) noncrystalline silicate and aluminate alloys establishes that the lowest conduction band states are derived from d states of TM atoms. The relative energies of these states are in agreement with the LMO approach, and have been measured by x-ray absorption spectroscopy for ZrO2–SiO2 alloys, and deduced from an interpretation of capacitance–voltage and current–voltage data for capacitors with Al2O3–Ta2O5 alloy dielectrics. The LMO model yields a scaling relationship for band offset energies providing a guideline for selection of gate dielectrics for advanced Si devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404997
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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