Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 2710-2712
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the electrical and microstructural characteristics of La- and Y-based oxides grown on silicon substrates by ultrahigh vacuum atomic beam deposition, in order to examine their potential as alternate gate dielectrics for Si complementary metal oxide semiconductor technology. We have examined the issues of polycrystallinity and interfacial silicon oxide formation in these films and their effect on the leakage currents and the ability to deposit films with low electrical thickness. We observe that polycrystallinity in the films does not result in unacceptably high leakage currents. We show significant Si penetration in both types of films. We find that the interfacial SiO2 is much thicker at ∼1.5 nm for the Y-based oxide compared to the La-based oxide where the thickness is 〈0.5 nm. We also show that while the Y-based oxide films show excellent electrical properties, the La based films exhibit a large flat band voltage shift indicative of positive charge in the films. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1320464
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