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Simple fabrication scheme for sub-10 nm electrode gaps using electron-beam lithography (2002)

Liu, K. ; Avouris, Ph. ; Bucchignano, J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 865-867

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: An innovative and simple method, based on electron-beam (e-beam) overlapping and overexposure techniques, is developed to fabricate sub-10 nm electrode gaps with very good electrical properties. Gaps with 4 to 10 nm spacing can be fabricated using a proper e-beam dose and pattern-developing time. The fabrication yield is nearly 100% for 8–9 nm gaps, but significantly smaller for 3–4 nm gaps. The gap leakage resistance is around 1012–1013 Ω, implying very good isolation. As an example, we present a transport study on a single 8 nm Co particle junction using a 10 nm gap. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1436275

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