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  • 2000-2004  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3610-3613 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation and growth of Cu nanoparticles during the initial stage of film growth by chemical vapor deposition was investigated using transmission electron microscopy and energy dispersive x-ray spectroscopy analysis. Cu nanoparticles did not migrate on the SiO2 surface because the Cu nanoparticles were deposited by autocatalytic reactions onto pre-existing nuclei, and therefore were strongly bonded to the surface. The initial growth mechanism of Cu nanoparticles appears to be that Cu particles deposit by surface reaction onto pre-existing nuclei, grow to become nanoparticles, and these nanoparticles form amorphous Cu islands. The amorphous Cu islands grow to become larger islands that consist of partially-crystallized Cu. The crystallized Cu particles then begin to form on the amorphous Cu phases. With increasing deposition time, the amorphous Cu phases completely convert into crystalline phases to form a crystalline film. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8311-8315 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This research is an attempt to apply thermal plasma chemical vapor deposition for the ultrafast deposition of Si films for solar cells. The improvement of stability, controllability, and cleanliness of the process enabled the deposition of μc-Si films at the ultrafast rate of over 1000 nm/s. Moreover, a minimum defect density of 7.2×1016 cm−3 was achieved. Monte-Carlo simulation and step coverage analysis suggested that the precursor is an approximately 1 nm cluster with a sticking probability of about 0.6. The success of this research may change the established concepts of Si deposition technology. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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