ZIB

Hits per page

hit 1 - 1 | 1 hit

Sorting

Electronic Resource

Material gain of bulk 1.55 μm InGaAsP/InP semiconductor optical amplifiers approximated by a polynomial model (2000)

Leuthold, J. ; Mayer, M. ; Eckner, J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 87 (2000), S. 618-620

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report material gain measurements of bulk 1.55 μm InGaAsP/InP performed at constant temperature and carried out over a large range of carrier densities and a large spectral region. In addition, a polynomial model for the material gain is proposed that not only fits the experimental data well over the whole measured range but also shows stable convergence in simulation tools when carrier densities exceed the usual range. To get reliable parameters for the model we eliminated temperature effects arising from different current biases and performed material-gain measurements over the largest possible carrier density range. The material-gain model realized is used in semiconductor optical amplifier simulation tools. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.371909

Permalink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit