Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (4)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Optical functions, phonon properties, and composition of InGaAsN single layers derived from far- and near-infrared spectroscopic ellipsometry (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5951-5958 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the optical properties of compressively strained InxGa1−xAs1−yNy (x〈0.13, y〈0.03) single layers for photon energies from 0.75 to 1.3 eV (near infrared), and for wave numbers from 100 to 600 cm−1 (far infrared) using spectroscopic ellipsometry. The intentionally undoped InGaAsN layers were grown pseudomorphically on top of undoped GaAs buffer layers deposited on Te-doped (001) GaAs substrates by metalorganic vapor-phase epitaxy. We provide parametric model functions for the dielectric function spectra of InGaAsN for both spectral ranges studied here. The InGaAsN layers show a two-mode phonon behavior in the spectral range from 100 to 600 cm−1. We detect the transverse GaAs- and GaN-sublattice phonon modes at wave numbers of about 267 and 470 cm−1, respectively. The polar strength f of the GaN sublattice resonance changes with nitrogen composition y and with the biaxial strain εxx resulting from the lattice mismatch between InGaAsN and GaAs. This effect is used to derive the nitrogen and indium content of the InGaAsN layers combining the observed f dependence with results from high-resolution double-crystal x-ray diffractometry and using Vegard's law for the lattice constants and the elastic coefficients C11 and C12. The calculated nitrogen concentrations reflect growth properties such as increasing N incorporation in InGaAsN with decreasing growth temperature, with increasing concentration of nitrogen in the gas phase, and with decreasing indium concentration in InGaAsN. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416859
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4927-4938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the optical properties of tensile strained GaAs1−yNy (0%≤y≤3.7%) single layers for photon energies from 0.75 to 4.5 eV and for wave numbers from 100 to 600 cm−1 using spectroscopic ellipsometry. The intentionally undoped GaAsN layers were grown pseudomorphically on top of undoped GaAs buffer layers deposited on Te-doped (001) GaAs substrates by metalorganic vapor phase epitaxy. We provide parametric model functions for the dielectric function spectra of GaAsN for both spectral ranges studied here. The model functions for photon energies from 0.75 to 4.5 eV excellently match dielectric function data obtained from a numerical wavelength-by-wavelength inversion of the experimental data (point-by-point fit). Critical-point analysis of the point-by-point fitted dielectric function is performed in the spectral regions of the fundamental band gap and the critical-point transitions E1 and E1+Δ1. The band-gap energy is redshifted whereas the E1 and E1+Δ1 transition energies are blueshifted with increasing y. For y≤1.65% the observed blueshift of the E1 energy is well explained by the sum of the effects of biaxial (001) strain and alloying. The GaAsN layers show a two-mode phonon behavior in the spectral range from 100 to 600 cm−1. We detect the transverse GaAs- and GaN-sublattice phonon modes at wave numbers of about 267 and 470 cm−1, respectively. The oscillator strength of the GaN-sublattice resonance increases linearly due to alloying and tensile strain. We compare our results from the single layers with those obtained previously from tensile and compressively strained GaAsN/GaAs and GaAsN/InAs/GaAs superlattices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359422
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Nitrogen dependence of the GaAsN interband critical points E1 and E1+Δ1 determined by spectroscopic ellipsometry (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1650-1652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the nitrogen concentrations on the E1 and E1+Δ1 transitions of tensile-strained GaAs1−yNy (0.1%≤y≤3.7%) grown pseudomorphically to GaAs by metalorganic vapor-phase epitaxy are studied by spectroscopic ellipsometry. Adachi's critical-point composite model is employed for ellipsometry data analysis. Contrary to the well-known redshift of the band-gap energy E0, we observe linearly blueshifted E1 and E1+Δ1 transition energies with increasing nitrogen composition y. For nitrogen compositions of 0≤y≤1.65%, the observed blueshift of the E1 energy is well explained by the sum of the effects of biaxial (001) strain and alloying. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1309021
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Phonon modes of GaNyP1−y (0.006≤y≤0.0285) measured by midinfrared spectroscopic ellipsometry (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3407-3409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Midinfrared spectroscopic ellipsometry reveals the two-phonon mode behavior of GaNyP1−y for nitrogen compositions 0.006≤y≤0.0285. The single layers (∼350 nm) studied were grown by metalorganic vapor-phase epitaxy on GaP substrates with orientations (001), and (001) with 5° off toward [110]. Line-shape analysis of the midinfrared response allows determination of the transverse- and longitudinal-optical phonon frequencies of the GaP- and GaN-like phonon modes. The polar strength of the GaN lattice resonance increases linearly with y, which can be used to monitor the nitrogen content of GaNyP1−y. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419050
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...