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Metal–insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates (2002)

Muraoka, Y. ; Hiroi, Z.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 583-585

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The effect of uniaxial stress along the c axis on the metal–insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1446215

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