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  • 2000-2004  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Conductivity and Hall effect characterization of highly resistive molecular-beam epitaxial GaN layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5821-5826 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly resistive molecular beam epitaxial GaN layers are characterized by temperature dependent conductivity and Hall effect measurements. Seven n-type GaN samples with room temperature layer resistivity ranging between 8 and 4.2×106 Ω cm are used in this study. The experimental data are analyzed by considering various transport models such as band and hopping conduction, scattering on charged dislocations and grain boundaries controlled transport. The same defect level of 0.23 eV, attributed to nitrogen vacancy, is found for layers with ρ300≤3.7×103 Ω cm. The Hall mobility for two lower resistivity layers is influenced mainly by phonon scattering (μH∼Tx, x=−1.4). However, higher resistivity layers show positive mobility power, x=0.5–0.9, which can be explained by dominating scattering on charged dislocations. Properties of layers with the highest resistivity (1×105 and 4.2×106 Ω cm) and extremely low Hall mobility (6 and 〈0.1 cm2 V−1 s−1) are consistent with grain boundary controlled transport. The barrier height between grains of 0.11 eV and an average grain size of 200 nm are found. Neither nearest-neighbor or variable range single phonon hopping nor multiphonon hopping can be clearly attributed to the conduction of the layers investigated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319966
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  • 2
    Electronic Resource
    Electronic Resource
    Conductivity and Hall-effect in highly resistive GaN layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3762-3764 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly resistive GaN layers grown by molecular beam epitaxy are characterized by temperature dependent conductivity and Hall effect measurements. Samples with ρ300≅3×103 Ω cm show room temperature Hall mobility of 22 and 35 cm2 V−1 s−1 and have a temperature dependence μH∼Tx with x=0.9 and 0.5. This is in contradiction to a sample with ρ300≅32 Ω cm which has a room temperature mobility of 310 cm2 V−1 s−1 and a μH∼Tx with x=−1.4. The same activation energy of 0.23 eV, attributed to donor-like defects, is found for all three samples investigated. Temperature dependent conductivity data can be reasonably fitted considering band conduction. The presence of various hopping mechanisms is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126773
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    Paper (German National Licenses)
    Fulltext
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