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  • 2000-2004  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Electromigration in eutectic SnPb solder lines (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4332-4335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared eutectic SnPb solder lines for electromigration study by a process of solder reflow into V-grooves etched on (001) Si wafer surfaces. They are thick lines and are highly reproducible. We report here results of lines of 100 μm in width and 150 to 800 μm in length, stressed by a current density of 2.8×104 A/cm2 at 150 °C in ambient. The accumulation of a large lump of solder, rather than hillocks of Sn and Pb, was observed at the anode, and depletions and voids were observed at the cathode. By measuring the volume of the lump, we have calculated the average effective charge number of electromigration in the eutectic solder to be 33, which is close to the reported value of 47 for self-electromigration in bulk Pb. Using x-ray dispersive analysis, we found that Pb is the dominant diffusing species. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357459
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  • 2
    Electronic Resource
    Electronic Resource
    Electromigration in Sn–Pb solder strips as a function of alloy composition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5703-5709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using thin film solder strips, we have investigated the electromigration of six different compositions of Sn–Pb solders at current density of 105 A/cm2 near ambient temperature. The six compositions are pure Sn, Sn80Pb20, Sn70Pb30, Sn62Pb38 (eutectic), Sn40Pb60, and Sn5Pb95. The eutectic alloy, with the lowest melting point and a high density of lamella interfaces, was found to have the fastest hillock growth. As composition moving toward the two terminal phases, the hillock growth rate decreases; but it increases again in pure Sn. The interface between Sn and Pb, being the fastest kinetic path of mass transport, also serves as the place to initiate hillock and void formation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319327
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  • 3
    Electronic Resource
    Electronic Resource
    Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallization (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 750-754 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The wetting reaction between molten eutectic SnPb solder and a sputtered trilayer Cu/Ni(V)/Al thin film metallization was studied using cross-sectional transmission electron microscopy and scanning electron microscopy. Reaction temperatures were from 200 to 240 °C and reaction times ranged from 1 to 40 min. The initial reaction products were Cu6Sn5 and Cu3Sn. The latter transforms to the former after an annealing greater than 1 min at 220 °C. The Cu6Sn5 grains adhere well to the Ni(V) surface and no spalling of them was observed, even after 40 min at 220 °C. This surprising result indicates that the Cu/Ni(V)/Al or Cu6Sn5/Ni(V)/Al is a stable thin film metallization for low temperature eutectic SnPb solder direct chip attachment to organic substrates. Additionally, Kirkendall voids accompanied Cu3Sn formation, yet the voids disappear when the Cu3Sn transforms to Cu6Sn5. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371967
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  • 4
    Electronic Resource
    Electronic Resource
    Ordered anodic alumina nanochannels on focused-ion-beam-prepatterned aluminum surfaces (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 120-122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combined process of electropolishing, focused-ion-beam lithography, and controlled anodization is used to fabricate anodic alumina films with ordered nanochannels. The ion beam is used to create a hexagonally close-packed lattice of concaves on a polished aluminum surface and the concaves act as pinning points for guiding the growth of nanochannels in the following anodization step. By carefully matching the lattice constant (100 nm) with the anodization voltage, ordered nanochannels with aspect ratio of ∼100 are fabricated. The effects of the ion dose and its corresponding depth of the concaves on the ordering of the nanochannel array are investigated and a minimum depth of 3 nm is found to be necessary for effective guidance of the growth of ordered nanochannels. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1335543
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of current crowding on vacancy diffusion and void formation in electromigration (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 988-990 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In multilevel interconnects, current crowding occurs whenever the current changes direction, such as when passing through a via. We propose that in current crowding, the current-density gradient can exert a driving force strong enough to cause excess vacancies (point defects) to migrate from high to low current-density regions. This leads to void formation in the latter. This is a key feature of electromigration-induced damage in very large scale integrated interconnects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125915
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