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  • 1
    Electronic Resource
    Electronic Resource
    Dynamic hysteresis for Potts spin system: a Monte Carlo simulation (2000)
    Springer
    Applied physics 70 (2000), S. 113-120 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 77.80.Dj; 77.80.Fm; 75.10.Hk; 77.22.Ej
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. A Monte Carlo approach based on the Q-state Potts model is developed to describe and simulate the dynamic hysteresis of Potts spin lattice against periodic time-varying external field E. The dynamic responses of the hysteresis loops against frequency ω of applied field and domain size R are studied. It is revealed that the hysteresis loops for the system energy W, polarization P, and domain wall fraction Π depend considerably on the frequency and domain size. The remnant polarization Pr shows a single-peak pattern as a function of ω. The P-E loop exhibits thin rhomb and fat rhomb patterns at low ω, whereas a tip-smoothed rhomb and roughly elliptical pattern is observed at high ω. The loop area can be scaled with Ω≈ω1/3 at low ω. The frequency dependency of the dynamic hysteresis is explained in terms of a simplified phenomenological model. At very small domain size, the dynamic hysteresis is significantly compressed, predicting the polarization weakening effect at small domain size.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050022
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  • 2
    Electronic Resource
    Electronic Resource
    Voltage shift of hysteresis loops of SrBi2Ta2O9 thin films under unipolar stress (2000)
    Springer
    Applied physics 71 (2000), S. 597-600 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 77.84.Dy; 77.84.Dj
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Voltage shifts of hysteresis loops of metalorganic decomposition (MOD)-derived SrBi2Ta2O9 (SBT) thin films, known as imprint, have been observed after exposing the thin-film capacitors to unipolar pulses. The voltage shift changes with cumulative total time at maximum voltage, following a relationship with no pulse-width dependence. The origin of the voltage shift is briefly discussed in terms of an internal bias field induced by injected electrons trapped at positive polarity. The pulse-measurement responses are greatly affected by the internal bias field, even though no imprint failure was observed up to 1010 unipolar pulses. The voltage shift and asymmetric properties can be removed easily by applying bipolar pulses of saturation amplitude.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390000697
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of cationic stoichiometry of the bottom electrode La1-xSrxCoO3 on the microstructures of Pb(Ta0.05Zr0.48Ti0.47)O3 ferroelectric films using Pt/TiO2 conducting barrier (2000)
    Springer
    Applied physics 70 (2000), S. 69-73 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 77.55+f; 77.80.Dj; 77.80.Fm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The heterostructures La1-xSrxCoO3/Pb(Ta0.05 Zr0.48Ti0.47)O3(PTZT)/La1-x SrxCoO3 have been deposited on SiO2/Si(001) substrates using Pt/TiO2 as conductive barrier by pulsed-laser deposition. La0.25Sr0.75CoO3(25/75) bottom electrodes with a pseudo-cubic perovskite structure favors (001)-textured growth of PTZT films. The ferroelectric capacitor LSCO(25/75)/PTZT/LSCO(25/75) remains about 96% of its polarization after 5×1010 switching cycles at an applied voltage of 5 V and a frequency of 500 kHz. The cross-section morphology of scanning electron microscopy and Rutherford backscattering spectra show that no obvious interdiffusion occurs across the interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050013
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    Paper (German National Licenses)
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