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Amphetamine and cocaine do not increase Narp expression in rat ventral tegmental area, nucleus accumbens or prefrontal cortex, but Narp may contribute to individual differences in responding to a novel environment (2002)

Lu, W. ; Marinelli, M. ; Xu, D. ; [et al.]

Oxford, UK : Blackwell Science Ltd

European journal of neuroscience 15 (2002), S. 0

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ISSN: 1460-9568

Source: Blackwell Publishing Journal Backfiles 1879-2005

Topics: Medicine

Notes: Narp is an immediate early gene product that acts extracellularly to cluster AMPA receptors at excitatory synapses. The present study tested the hypothesis that drugs of abuse alter Narp expression and thereby influence AMPA receptor transmission in addiction-related circuits. Immunohistochemical studies demonstrated the existence of Narp-positive cells in hippocampus, prefrontal cortex (PFC) and nucleus accumbens (NAc), with lower levels of staining in the ventral tegmental area (VTA). To study the effects of psychomotor stimulants, Narp levels were quantified by Western blotting and normalized to actin. There were no differences in Narp levels in any brain region between rats treated with repeated saline injections, a single amphetamine injection (5 mg/kg), repeated amphetamine injections (5 mg/kg × 5 days), or repeated cocaine injections (20 mg/kg twice daily × 7 days). We also examined the possible role of Narp in individual differences in responding to a novel environment, a predictor of behavioural responses to psychomotor stimulant drugs including the propensity to acquire drug self-administration. Narp levels in the PFC, but not other regions, were significantly correlated with locomotor activity in a novel environment. These findings suggest that differential Narp expression in the PFC may be involved in determining individual vulnerability to drugs of abuse, perhaps by influencing the activity of its excitatory projections.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1046/j.1460-9568.2002.02036.x

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High quality CVD diamond: a Raman scattering and photoluminescence study (2001)

Donato, M.G. ; Faggio, G. ; Marinelli, M. ; [et al.]

Springer

The European physical journal 20 (2001), S. 133-139

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ISSN: 1434-6036

Keywords: PACS. 81.05.Uw Carbon, diamond, graphite – 78.30.Am Elemental semiconductors and insulators – 78.55.Ap Elemental semiconductors

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract: High quality synthetic diamonds were grown on single-crystal silicon by microwave plasma enhanced chemical vapour deposition (CVD). A careful optimisation of both the experimental setup and the growth parameters was necessary before that the achievement of the best results was made possible. The films were deposited using a CH4-H2 gas mixture at methane concentrations variable in the range 0.6-2.2%, while the substrate temperature was fixed at 750 °C. Raman spectroscopy and photoluminescence (PL) were utilised to monitor the quality of the deposited films and to study the spatial distribution of defects, respectively. Micro-Raman analysis shows that linewidths of the diamond peak lower than 2.4 cm-1 can be easily measured at the growth surface, indicating that the crystalline quality of individual grains is comparable to that of the best natural diamonds. The excellent phase purity of the diamond microcrystals at the growth surface is witnessed by the complete absence of any non-diamond carbon feature and by a very weak luminescence background in the 1.6-2.4 eV spectral range. A worsening of the quality of the diamond particles is found moving from the growth surface towards the film-substrate interface. A photoluminescence feature at about 1.68 eV, commonly associated to Si impurities, is distinctly observed as the exciting laser beam is focused close to the interface. A progressive degradation of the global quality of the films is found with increasing methane concentration in the gas mixture, as witnessed by an increased PL background in the films grown at higher methane concentrations.