ISSN:
1572-9540
Keywords:
diffusion
;
73As
;
GaAs
;
GaP
;
computer simulation
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Self-diffusion on the As sublattice in intrinsic GaAs and foreign-atom diffusion on the P sublattice in intrinsic GaP were investigated in a direct way by As tracer diffusion measurements using the radioisotope 73As. For this purpose 73As was implanted in both materials at the ISOLDE facility of CERN. Then diffusion annealings were performed followed by serial sectioning and counting of the radioactivity in each section. The resulting profiles were simulated within a computer model which accounts for the observed loss of tracer to the diffusion ambient. The so-obtained diffusion coefficients for As in GaAs and GaP are compared with existing diffusivities in these compounds.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1012641212173
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