ISSN:
1063-7826
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Physik
Notizen:
Abstract A study is reported of absorption, conductivity, and photoconductivity of photosensitive μc-Si:H weakly doped with boron. The dependences of photoconductivity on the temperature and the intensity of light were measured in a temperature range of 100–400 K for photon energies of 0.9, 1.3, and 1.8 eV. The results obtained are explained by the dominant contribution of the microcrystalline phase and the states at the interfaces of microcrystals to the transport and recombination of nonequilibrium carriers in μc-Si:H. Possible recombination mechanisms and the change of their role with temperature are analyzed.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1134/1.1187988
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