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  • 2000-2004  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    All-perovskite-oxide ferroelectric memory transistor composed of Bi2Sr2CuOx and PbZr0.5Ti0.5O3 films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8153-8158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An all-perovskite-oxide transistor composed of a tetragonal perovskite PbZr0.5Ti0.5O3 (ferroelectric) and a layered perovskite Bi2Sr2CuO6 (conducting channel) is fabricated on a cubic perovskite Nb-doped SrTiO3 (gate electrode). We demonstrate a considerably large conductance modulation of Bi2Sr2CuO6 by varying the direction and magnitude of the polarization. The ratio of the ON- and OFF-state drain currents reaches 196. A memory retention time as long as about 8 h is also observed. The drain current versus the drain voltage curves analyzed by adopting a semiconductor model give fairly good agreement with the measurement data. We also discuss the advantages and future prospects of all-perovskite-oxide transistors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370999
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial structure SrTiO3〈011〉 on Si〈001〉 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5421-5424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An epitaxial structure, 〈011〉-oriented SrTiO3 film on Si〈001〉 substrate, is developed by inserting an epitaxial Ce0.12Zr0.88O2 buffer layer. Films are prepared by pulsed-laser deposition and evaluated by x-ray diffraction. Origin of this epitaxial growth is considered as a result of the ionic bonding at the interface of perovskite (SrTiO3) and fluorite (Ce0.12Zr0.88O2) structures. SrTiO3(011) surface of this epitaxial structure leads to a non-c-axis-oriented epitaxial growth of bismuth-layerstructured-ferroelectric Bi4Ti3O12 film on Si〈001〉. Unique surface morphologies and superior electrical properties are presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357461
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    Paper (German National Licenses)
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