ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Deposition temperature and annealing conditions have pronounced effects on the structure and electrical properties of LPCVD silicon thin films. Films grown at 580°C are amorphous whereas those grown at 620°C are microcrystalline. All thin films are subjected to phosphorous diffusion followed by different annealing treatments. Annealing of amorphous films at 1000°C results in large grains with no favoured orientation and with a relatively high mobility value. Annealing treatment at 1000°C of the microcrystalline sample results in moderate grain growth with a relatively low mobility which presumably is due to some favoured grain orientation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1004867410373
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