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  • 2000-2004  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Alloy composition and electronic structure of Cd1−xZnxTe by surface photovoltage spectroscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 703-707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The alloy composition of a Cd1−xZnxTe(111) sample and its spatial homogeneity have been determined by surface photovoltage spectroscopy (SPS) and compared to conventional energy dispersive x-ray spectroscopy measurements. Experimental improvements of the former technique yield a contactless, surface sensitive, and highly accurate spectral resolution of the band gap (error〈4 meV) and consequently of the Zn concentration (error〈0.6% in comparison with the latter technique). In addition, SPS is capable of determining the face and type of the Cd1−xZnxTe as well as identifying gap states at its surface. The electronic structure has been investigated in comparison with n-CdTe(111), before and after various surface chemical treatments. An acceptor surface state has been observed at 1.21 eV below the conduction band edge and attributed to TeO2. A donor surface state (with a lower concentration relative to the corresponding state in CdTe) associated with Cd atom displacement has been found at 1.42 eV above the valence band maximum. A chemically induced surface state at 0.72 eV below the conduction band edge may be due to Zn vacancies, as supported by x-ray photoelectron spectroscopy measurements. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425071
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  • 2
    Electronic Resource
    Electronic Resource
    Surface states and surface oxide in GaN layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 390-395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface photovoltage spectroscopy, photoluminescence, Auger electron spectroscopy and x-ray photoelectron spectroscopy were used to correlate the chemical changes induced by HCl etching of GaN surface to changes in the yellow luminescence related states, through their manifestation in surface photovoltage. The results show a correlation between a removal of the gallium oxide from the surface and a reduction of the yellow luminescence related transition in the surface photovoltage spectra. Based on this observation, it is suggested that the well known yellow luminescence is emitted from surface states associated with the gallium oxide that decorates the free surface and possibly also the substrate interface and internal grain boundaries. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330553
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal stability of Pt Schottky contacts to 4H–SiC (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5724-5728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles by x-ray photoelectron spectroscopy have been used in conjunction with current–voltage measurements to study the thermal stability of a 50-nm-thick Pt contact to n-4H–SiC substrate. A reaction between the Pt and the SiC substrate is observed at temperatures of 600 °C and above. Annealing below that temperature improves the ideality and the uniformity of the Schottky characteristics, while annealing above this temperature degrades the electrical performance and uniformity. Thermodynamic stability is not reached even after annealing for 1 h at 900 °C. A local improvement of the characteristics at 800 °C is correlated with the formation of a second graphite film in the Pt–SiC reaction. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319165
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  • 4
    Electronic Resource
    Electronic Resource
    Studies of phase segregation in Cd1−xZnxTe using surface photovoltage spectroscopy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 436-438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd1−xZnxTe wafers used for x-ray detector arrays have been failure analyzed using x-ray diffraction, x-ray electron spectroscopy (XPS), energy dispersive spectroscopy (EDS), and surface photovoltage spectroscopy (SPS). The last shows ZnTe segregation in failed pixels while the precipitant phase is too small to be observed by the other techniques. The Zn concentration, measured using EDS and XPS, was higher than that deduced from SPS data, confirming the conclusion. The segregation can be revealed only by SPS since it is sensitive to the electronic structure and thus to x in each phase while the other techniques average x over their measurement volume. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1493230
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  • 5
    Electronic Resource
    Electronic Resource
    Yellow luminescence and Fermi level pinning in GaN layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 987-989 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A correlation between Fermi level pinning and yellow luminescence in Pt/n-GaN junctions has been studied using Schottky barrier measurements by internal photoemission spectroscopy and complementary deep level spectroscopies. The results show that illumination by photons with energies in the yellow luminescence range causes an unpinning of the interface Fermi level, accompanied by a significant increase of the Schottky barrier height from ∼1 to ∼1.9 eV. This strongly suggests the presence of acceptor states related to the yellow luminescence at the Pt/GaN interface. These states are charged in equilibrium and pin the interface Fermi level but can be optically discharged, resulting in a nearly unpinned interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288813
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