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  • 1995-1999  (53)
  • 1990-1994  (59)
  • 1975-1979  (50)
  • 1965-1969  (10)
  • 1
    Electronic Resource
    Electronic Resource
    A new high-yielding method for the preparation of 2-alkyl- and 1,2-dialkyl-4-nitro-5-bromoimidazoles (1992)
    s.l. : American Chemical Society
    The @journal of organic chemistry 57 (1992), S. 3240-3242 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00037a051
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of intracavity spatial filtering on the beam characteristics of a copper vapor laser (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 537-538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intracavity spatial filtering in a copper vapor laser is demonstrated to achieve low divergence output beam. The output beam characteristics were monitored. The average beam divergence of 0.45 mrad (∼two times the diffraction limit) was achieved. Temporal pulse width of 3-ns full width at half maximum was obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347703
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Use of black diamond-like carbon films as a contrast enhancement layer for liquid-crystal displays (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2288-2290 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report development of single-layer, highly durable, pinhole-free, abrasion-resistant, chemically inert "black coating'' suitable for use as a contrast enhancement layer for liquid- crystal display devices. The single layer is a diamond-like carbon coating that has a high extinction coefficient and appears black due to optical absorption. The optical transmittance is less than 2% over the visible spectrum, and the reflectance is about 20%. Furthermore, this coating is easy to deposit onto large-area substrates at high deposition rates. The coating is sufficiently durable, electrically insulating, and chemically compatible with liquid-crystal display materials. Its hardness exceeds that of SiC (9+ on Mohs scale), and it is resistant to abrasion and most common solvents and acids. It exhibits good adhesion to glass, silicon, metal, and oxide substrates. Films of this material have been used to provide an increased contrast enhancement ratio in liquid-crystal displays. Details on the synthesis of these films are presented. Also, data on the optical and mechanical properties of these films as well as their use as contrast enhancement layers for liquid-crystal displays are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103890
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    An integrated PC-based characterization system for optical waveguides (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2690-2694 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper reports an automatic instrument developed for characterization of optical waveguides. A specially designed waveguide excitation unit offers a flexible platform for measurement of optical waveguide characteristics like number of propagating modes, mode field intensity distribution, the refractive index profiles, waveguide geometry, attenuation, and dispersion. Further, the availability of attachments like filters, polarizers, chopper, intensity profiler, and CCD camera make the instrument flexible enough for a variety of other experiments also. The instrument is PC controlled and assisted by user friendly menu-driven software. A large number of waveguides have been analyzed using the setup. These results are also presented in the paper. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145611
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Large-bore copper vapor laser with a double thyratron pulse modulator (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 314-318 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Use of a double thyratron pulse modulator in a large-bore copper vapor laser is demonstrated. Design of the laser consisting of a discharge tube of 70-mm diameter and 1500-mm length is discussed. The laser gave 55-W output power at 4.8-kHz repetition rate using neon as the buffer gas with 9.1-kW modulator switching of electrical power. The efficiency of the laser was about 0.6%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144250
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Wafer temperature measurements and end-point detection during plasma etching by thermal imaging (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1299-1301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal imaging by an infrared television camera has been successfully employed as an in situ method for end-point detection during plasma etching of polycrystalline silicon layers on a SiO2/Si substrate. In addition, it is also shown that thermal imaging can be used for remote sensing of etch rate, heat of reaction, wafer temperature, and for measuring thermal time constants during plasma etching. From these measurements, the heat-transfer coefficient of the thermal contact between the silicon wafer and the water-cooled electrode can be determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105480
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Sensitive plasma etching endpoint detection using tunable diode laser absorption spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2779-2781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the use of a tunable diode laser locked to a molecular vibrational absorption line as a sensitive plasma etching endpoint detector. Measurements were made on multilayer silicon wafers etched in a SF6 plasma discharge. We show that polycrystalline silicon to silicon dioxide endpoint transitions on wafers with exposed area as small as 33 mm2 should be observable by detecting the etch end product SiF4. The method shows considerable potential as an endpoint detection technique for applications such as contact hole etching wherein very small areas are being etched.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111468
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Reactive ion etching end-point determination by plasma impedance monitoring (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1912-1914 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impedance monitoring of a rf glow discharge is successfully used to determine the end point of reactive ion etching. The feasibility of using this technique is demonstrated on diode, triode, and magnetic multipole enhanced triode reactors applied to etching polycrystalline silicon on SiO2 on Si and Si3N4 on Si in an SF6 plasma, and to stripping photoresist on Al on Si in an O2 plasma. The end point of etching is determined by monitoring changes in the induced dc bias, the rf voltage, the rf current, or the phase relationship between them on either of the powered electrodes (in the cases of the triode configurations). This method is easily applicable as in in-process end-point detector and eliminates the need of optical access to either the plasma or the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108361
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic multipole-based reactive ion etching reactor (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2335-2337 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of a simple inexpensive magnetic multipole to a parallel plate triode results in a magnetic enhanced etch reactor configuration that has impressive low pressure characteristics. The multipole electrode which is in the form of a cylindrical multipolar bucket, open at both ends, is added to the powered electrode of the triode being employed as a plasma etching system. The multipole becomes, in effect, an extension of the ground shield, surrounding either electrode. The resulting electrode configuration produces an extremely uniform, dense plasma at pressures as low as 2–3×10−4 Torr. The effect of the magnetic enhancement (electron containment, uniformity profile modification, and low substrate bias) is particularly pronounced at lower pressures. Significant improvement over existing triode schemes is obtained using the grounded cylindrical multipolar bucket as an extension of the ground shield of the driven electrode (not the substrate electrode). This system is considerably simpler than dual frequency driven trielectrode systems since it uses 13.56 MHz excitation of both electrodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107018
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Designing and selecting a collector for optimum field performance on the basis of pressure-area isotherms (1994)
    s.l. : American Chemical Society
    Langmuir 10 (1994), S. 510-513 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00014a028
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    Paper (German National Licenses)
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