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  • 1
    Electronic Resource
    Electronic Resource
    Practical nitric oxide measurement employing a nitric oxide-selective electrode (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2714-2718 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An NO-selective electrode was developed as an easily applicable tool for a real-time nitric oxide (NO) measurement. The working electrode (0.2 mm diam) was made from Pt/Ir alloy coated with a three-layered membrane. The counterelectrode was made from a carbon fiber. When a stable NO donor, S-nitroso-N-acetyl-dl-penicillamine, was applied, the electrode current increased in a dose-dependent fashion. The current and calculated NO concentration showed a linear relationship in the range from 0.2 nM (S/N=1) to 1 μM of NO. The response of the electrode was 1.14±0.09 s. The effects of temperature, pH, and chemicals other than NO on the electrode current were also evaluated. Electrodes which were placed in the luminal side of rat aortic rings exhibited 30 pA of current due to NO generation induced by the addition of 10−6 M of acetylcholine. The current was eliminated in the presence of 50 μM NG-monomethyl-L-arginine, an inhibitor of NO synthase. Thus, this NO-selective electrode is applicable to real-time NO assay in biological systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144674
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of anisotropic stress around Si trenches by polarized Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 941-944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarized Raman spectra around trenches formed on (100) silicon wafers have been measured and it has been found that the peak frequency shift varies with the polarization configuration, suggesting that anisotropic stresses occur around the trenches. The different stress components have been calculated by the use of the polarization Raman technique and it was found that the stress distribution of each component approximately agrees with that of each component simulated by a finite element method. Polarized Raman spectroscopy is a powerful technique for the estimation of an anisotropic stress of an electronic silicon device in situ. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360287
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  • 3
    Electronic Resource
    Electronic Resource
    Study of crystallographic orientations in the diamond film on cubic boron nitride using Raman microprobe (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 428-431 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured Raman spectra of a diamond film prepared on the (111) surface of cubic boron nitride(c-BN) by the dc plasma chemical vapor deposition method. The polarization property of the Raman line of diamond agrees well with that of LO phonon for the (111) surface of c-BN. The agreement between the polarization property of Raman lines of diamond and c-BN indicates a possibility of the heteroepitaxial growth of the diamond film on the (111) surface of c-BN. It is found that the diamond layers on c-BN are under tensile stress of 2.2×1011 dyn/cm2. The value of the corresponding tensile strain agrees well with the lattice mismatch calculated from the lattice constants of c-BN and diamond, supporting the possibility of the heteroepitaxial growth of the diamond film. Raman spectroscopy is a powerful technique not only to estimate the stress in the diamond film but also to determine the crystallographic orientation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103656
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  • 4
    Electronic Resource
    Electronic Resource
    Study of crystallographic orientations in the diamond film on the (100) surface of cubic boron nitride using a Raman microprobe (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1387-1388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured Raman spectra of a diamond film prepared on the (100) surface of cubic boron nitride(c-BN) by the dc plasma chemical vapor deposition method. It is found that the polarization property of the Raman line of diamond coincides well with that of the LO phonon for the (100) surface of c-BN. The coincidence between the polarization property of Raman lines of diamond and c-BN evidences heteroepitaxial growth of the diamond film on the (100) surface of c-BN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104316
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of carrier concentration and stress in GaAs metal-semiconductor field-effect transistor by cathodoluminescence spectroscopy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1693-1696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the cathodoluminescence spectra around the gate electrode in the cross section of a GaAs metal-semiconductor field-effect transistor with a detector and proposed a new technique to estimate the carrier concentration and stress in electronic devices, using cathodoluminescence spectroscopy. From a comparison between maps of the peak intensity and peak-energy shift, it is found that there is heavy carrier doping in the drain and source regions and that the carrier concentration is about 6×1017 atoms/cm3. The carrier concentration estimated from the peak-energy shift agrees well with that obtained from the capacitance–voltage method. Furthermore, it is found that there is hardly any carrier doping and that stresses are relaxed at a distance of about 2 μm from the gate electrode. Cathodoluminescence spectroscopy is a useful technique for estimating the two-dimensional distribution of the carrier concentration and stress in electronic devices within a short amount of time. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368238
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  • 6
    Electronic Resource
    Electronic Resource
    Raman scattering from diamond particles (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3114-3116 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of diamond powders with size less than 2 μm have been measured as a function of the particle size. The Raman line was found to become more asymmetric with some tailing towards lower Raman shifts, broader, and weaker with decreasing particle size. The observed result can be explained by a phonon confinement effect rather than by a strain effect. This work predicts that it is very difficult to detect Raman spectra of diamond particles with size less than ∼50 A(ring). A broad Raman band, whose intensity becomes stronger with decreasing particle size, was observed around 600 cm−1 in the spectra of diamond powders with particle size less than 2 μm. We hypothesize that the broad band arises from transverse acoustic phonons near the Brillouin zone boundary because of the relaxation in the wave vector selection rule.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109154
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  • 7
    Electronic Resource
    Electronic Resource
    Raman scattering from nanometer-sized diamond (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 694-696 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured Raman spectra of diamond with nanometer size, called cluster diamond. The Raman bands assigned to sp2 and sp3 clusters have been observed at around 1600 and 1322 cm−1, respectively. This result suggests that the cluster diamond slightly contains the sp2 cluster. The Raman band assigned to sp3 cluster is found to shift by −10 cm−1, compared with that of bulk crystal and to be asymmetric with some tailing toward lower Raman frequency. The observed Raman spectrum agrees well with that calculated by a phonon confinement model. The crystallite size of the cluster diamond estimated from the phonon confinement model agrees approximately with that estimated from x-ray measurement. Raman spectroscopy gives some information about the crystallite size of diamond particles with nanometer size. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115206
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  • 8
    Electronic Resource
    Electronic Resource
    Determination of anisotropic refractive indices of a single-crystal organic thin film by attenuated total reflection Raman spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2096-2098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined the dispersion of the anisotropic refractive indices of a single-crystal organic thin film using attenuated total reflection (ATR) Raman spectroscopy. ATR Raman spectroscopy simultaneously gives information about the molecular orientation of thin organic films and the dispersion of anisotropic refractive indices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111694
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  • 9
    Electronic Resource
    Electronic Resource
    Experimental evidence for high-yield C74 production in an arc periphery plasma (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 888-890 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatial profiles and buffer-gas pressure dependences of fullerenes contained in primary carbon soots are measured in order to investigate production ratios of higher fullerenes to C60 in an arc-discharge fullerene generator. It is found that C74 is efficiently produced in the arc periphery-plasma region while C60 is mainly produced in the core-plasma region, being the most dominant higher fullerene under the condition of a higher helium-gas pressure (〉100 Torr). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122028
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectra and Fourier transform infrared spectra of mono- and multilayer films of cadmium arachidate (1978)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 82 (1978), S. 1989-1991 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100507a007
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