Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 1192-1194
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
ZnSe molecular beam epitaxial growth on GaAs(110) substrates has been studied using reflection high-energy electron diffraction (RHEED), atomic force microscopy, and transmission electron microscopy. An atomically flat and low defect homoepitaxial buffer GaAs(110) was grown with high V/III ratio (≥150) and at low growth temperature (∼430 °C). At the beginning of ZnSe growth on a GaAs(110) buffer epitaxial layer, RHEED oscillation was observed and no facet was seen on a pseudomorphic ZnSe(110) surface. Low defect ZnSe films (defect density ≤105 cm−2) were also obtained without the Zn preexposure process necessary for low defect ZnSe(001) growth. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119622
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